Characterization of semiconductor sub-micron gratings: Is there an alternative to scanning electron microscopy?
The characterization of sub-micron gratings is usually performed on scanning electron microscopes, although the dimensions of the features often make the observations difficult. We report here on a new method applicable to III-V and II-VI semiconductors: we use transmission electron microscopy on wedge-shaped samples oriented along a  zone axis. Grating parameters can be obtained with a precision of 1 nm, along with information on the shape and the regularity of the ridge profile, the surface quality as well as the local chemical composition.
Bonard, JM, ECOLE POLYTECH FED LAUSANNE,DEPT PHYS,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND.
ISI Document Delivery No.: TZ797
Times Cited: 2
Cited Reference Count: 15
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Record created on 2007-08-31, modified on 2016-08-08