Numerical and experimental results on the effect of randomness in GaAs/Al0.3Ga0.7As superlattices having a small number of randomly distributed well widths are reported. The numerical results indicate the splitting of the extended state miniband into sub-minibands of localized states having a disorder-induced fine structure. The comparison between the experimental results for low-temperature absorption spectra and the computed joint density of states of the investigated samples confirms the predicted features. The high-temperature photoluminescence intensity of random superlattices is observed to be enhanced with respect to the ordered case.
Title
The role of randomly distributed well widths in disordered GaAs/AlGaAs superlattices
Published in
Semiconductor Science and Technology
Volume
11
Issue
3
Pages
308-314
Date
1996
ISSN
0268-1242
Note
Univ bari,dipartmento fis,i-70126 bari,italy. ist nazl fis mat,i-70126 bari,italy. univ geneva,appl phys grp,ch-1211 geneva 4,switzerland. ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland. ecole polytech fed lausanne,inst genie atom,ch-1015 lausanne,switzerland. Lorusso, GF, ECOLE POLYTECH FED LAUSANNE,INST PHYS APPL,CH-1015 LAUSANNE,SWITZERLAND.
ISI Document Delivery No.: TZ797
Cited Reference Count: 28
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Record creation date
2007-08-31
