Capacitance-voltage profiling of quantum well structures


Published in:
J. Appl. Phys., 79, 9, 7005-7013
Year:
1996
ISSN:
0021-8979
Note:
Tschirner, BM, ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND. ISI Document Delivery No.: UJ084 Cited References: ANDREANI LC, 1990, PHYS REV B, V42, P8928 COWLEY AM, 1966, J APPL PHYS, V37, P3024 HERMAN MA, 1991, J APPL PHYS, V70, R1 JOHNSON W, 1971, IEEE T ELECTRON DEV, V18, P96 KENNEDY DP, 1968, IBM J RES DEV, V12, P399 KREHER K, 1993, PHYS STATUS SOLIDI A, V135, P597 KROEMER H, 1980, APPL PHYS LETT, V36, P295 KROEMER H, 1981, SOLID STATE ELECTRON, V24, P655 LANG DV, 1986, APPL PHYS LETT, V49, P812 LURYI S, 1988, APPL PHYS LETT, V52, P501 MISSOUS M, 1985, SOLID STATE ELECT, V28, P566 RIMMER JS, 1993, J APPL PHYS, V73, P5032 SCHUBERT EF, 1990, J ELECTRON MATER, V19, P521 SHOCKLEY W, 1949, BELL SYST TECH J JUL SUDARAM M, 1993, J APPL PHYS, V73, P251 ZIMMERMANN B, 1989, THESIS EPF LAUSANNE NR 16 TC 10 PU AMER INST PHYSICS PI MELVILLE PA CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
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