000110947 001__ 110947
000110947 005__ 20190616105156.0
000110947 022__ $$a0021-8979
000110947 02470 $$2ISI$$aA1996UJ08400044
000110947 037__ $$aARTICLE
000110947 245__ $$aQuantitative analysis of electron-beam-induced current profiles across p-n junctions in GaAs/Al0.4Ga0.6As heterostructures
000110947 260__ $$c1996
000110947 269__ $$a1996
000110947 336__ $$aJournal Articles
000110947 500__ $$aBonard, JM, ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND.
000110947 500__ $$aISI Document Delivery No.: UJ084
000110947 500__ $$aTimes Cited: 2
000110947 500__ $$aCited Reference Count: 29
000110947 500__ $$aCited References:
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000110947 500__ $$aBEGGAH Y, 1994, MAT SCI ENG B-SOLID, V24, P101
000110947 500__ $$aBERZ F, 1976, SOLID ST ELECTRON, V19, P437
000110947 500__ $$aBONARD JM, IN PRESS J APPL PHYS
000110947 500__ $$aBRESSE JF, 1982, SCANNING ELECTRON MI, V4, P1487
000110947 500__ $$aDONOLATO C, 1982, SOLID ST ELECTRON, V25, P1077
000110947 500__ $$aDONOLATO C, 1994, J APPL PHYS, V76, P959
000110947 500__ $$aHACKETT WH, 1972, J APPL PHYS, V43, P1649
000110947 500__ $$aHACKETT WH, 1972, J APPL PHYS, V43, P2857
000110947 500__ $$aHOLT DB, 1989, SEM MICROCHARACTERIZ
000110947 500__ $$aJASTRZEBSKI L, 1975, APPL PHYS LETT, V27, P537
000110947 500__ $$aKONNIKOV SG, 1988, SOV PHYS SEMICOND, V21, P1229
000110947 500__ $$aLEAMY HJ, 1982, J APPL PHYS, V53, R51
000110947 500__ $$aLUKE KL, 1985, J APPL PHYS, V57, P1978
000110947 500__ $$aLUKE KL, 1994, J APPL PHYS, V75, P1623
000110947 500__ $$aOELGART G, 1981, PHYS STATUS SOLIDI A, V66, P283
000110947 500__ $$aONG VKS, 1994, SOLID STATE ELECTRON, V37, P1
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000110947 500__ $$aPERANSIN JM, 1986, PHYS STATUS SOLIDI A, V94, P713
000110947 500__ $$aREIMER L, 1985, SCANNING ELECTRON MI, CH7
000110947 500__ $$aSIEBER B, 1994, MAT SCI ENG B-SOLID, V24, P35
000110947 500__ $$aVANROOSBROECK W, 1955, J APPL PHYS, V26, P380
000110947 500__ $$aWATANABE M, 1977, IEEE T ELECTRON DEV, V24, P1172
000110947 500__ $$aWERNER U, 1988, J PHYS D, V21, P116
000110947 500__ $$aWITTRY DB, 1965, J APPL PHYS, V36, P1387
000110947 500__ $$aWITTRY DB, 1967, J APPL PHYS, V38, P375
000110947 500__ $$aWU CJ, 1978, J APPL PHYS, V49, P2827
000110947 500__ $$aZOOK JD, 1983, APPL PHYS LETT, V42, P602
000110947 520__ $$aWe propose a method for the quantitative evaluation of electron-beam-induced current profiles measured in normal-collector geometry across p-n junctions in GaAs/Al0.4Ga0.6As heterostructures. We obtain a theoretical expression, valid for all distances from the junction, and which takes into account the spatial extension of the electron-hole pairs generation. From the comparison of calculated with experimental profiles, we evaluate the minority carrier diffusion length and to some extent the surface recombination velocity. (C) 1996 American Institute of Physics.
000110947 6531_ $$aSURFACE RECOMBINATION VELOCITY
000110947 6531_ $$aCARRIER DIFFUSION LENGTHS
000110947 6531_ $$aSEMICONDUCTORS
000110947 6531_ $$aMICROSCOPY
000110947 6531_ $$aSEM
000110947 700__ $$aBonard, J. M.
000110947 700__ $$g105197$$aGaniere, J. D.$$0240830
000110947 773__ $$j79$$tJournal of Applied Physics$$k9$$q6987-6994
000110947 909C0 $$xU10156$$0252003$$pLOEQ
000110947 909CO $$pSB$$particle$$ooai:infoscience.tind.io:110947
000110947 937__ $$aLOEQ-ARTICLE-1996-017
000110947 970__ $$a166/LOEQ
000110947 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000110947 980__ $$aARTICLE