Quantitative analysis of electron-beam-induced current profiles across p-n junctions in GaAs/Al0.4Ga0.6As heterostructures
We propose a method for the quantitative evaluation of electron-beam-induced current profiles measured in normal-collector geometry across p-n junctions in GaAs/Al0.4Ga0.6As heterostructures. We obtain a theoretical expression, valid for all distances from the junction, and which takes into account the spatial extension of the electron-hole pairs generation. From the comparison of calculated with experimental profiles, we evaluate the minority carrier diffusion length and to some extent the surface recombination velocity. (C) 1996 American Institute of Physics.
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Bonard, J. M., & Ganiere, J. D. (1996). Quantitative analysis of electron-beam-induced current profiles across p-n junctions in GaAs/Al0.4Ga0.6As heterostructures. Journal of Applied Physics, 79(9), 6987–6994. https://doi.org/10.1063/1.361464
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WOS:A1996UJ08400044
1996
79
9
6987
6994
Bonard, JM, ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND.
ISI Document Delivery No.: UJ084
Cited Reference Count: 29
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