Carrier transfer and capture into quantum wire arrays grown on V-groove substrates
The mechanisms of carrier transfer from barrier regions (superlattices, side-wall and vertical quantum wells) into arrays of quantum wires are investigated by time-resolved photoluminescence. The wires are grown by different techniques on V-groove substrates. The transfer times range from 25 to 900 ps, depending on the details of the whole structure. The fast carrier transfer is modeled by a diffusion equation which allows one to estimate the quantum mechanical capture time from a two-dimensional vertical QW into a one-dimensional QWR to be <2ps.
Haacke, S, SWISS FED INST TECHNOL, INST MICRO & OPTOELECTR, DEPT PHYS, CH-1015 LAUSANNE, SWITZERLAND.
ISI Document Delivery No.: UN207
Times Cited: 4
Cited Reference Count: 6
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Record created on 2007-08-31, modified on 2016-08-08