Infoscience

Journal article

Carrier transfer and capture into quantum wire arrays grown on V-groove substrates

The mechanisms of carrier transfer from barrier regions (superlattices, side-wall and vertical quantum wells) into arrays of quantum wires are investigated by time-resolved photoluminescence. The wires are grown by different techniques on V-groove substrates. The transfer times range from 25 to 900 ps, depending on the details of the whole structure. The fast carrier transfer is modeled by a diffusion equation which allows one to estimate the quantum mechanical capture time from a two-dimensional vertical QW into a one-dimensional QWR to be <2ps.

    Keywords: NONPLANAR

    Note:

    Haacke, S, SWISS FED INST TECHNOL, INST MICRO & OPTOELECTR, DEPT PHYS, CH-1015 LAUSANNE, SWITZERLAND.

    ISI Document Delivery No.: UN207

    Times Cited: 4

    Cited Reference Count: 6

    Cited References:

    CHRISTEN J, 1992, APPL PHYS LETT, V61, P67

    DEVEAUD B, 1994, OPT QUANT ELECTRON, V26, S722

    HILLMER H, 1994, OPT QUANT ELECTRON, V26, S691

    PFISTER M, 1994, APPL PHYS LETT, V65

    RINALDI R, 1994, PHYS REV B, V50, P11795

    WALTHER M, 1992, PHYS REV B, V45, P6333

    Sp. Iss. SI

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

Fulltext

Related material