Carrier transfer and capture into quantum wire arrays grown on V-groove substrates

The mechanisms of carrier transfer from barrier regions (superlattices, side-wall and vertical quantum wells) into arrays of quantum wires are investigated by time-resolved photoluminescence. The wires are grown by different techniques on V-groove substrates. The transfer times range from 25 to 900 ps, depending on the details of the whole structure. The fast carrier transfer is modeled by a diffusion equation which allows one to estimate the quantum mechanical capture time from a two-dimensional vertical QW into a one-dimensional QWR to be <2ps.


Published in:
Solid-State Electronics, 40, 1-8, 299-302
Year:
1996
ISSN:
0038-1101
Keywords:
Note:
Haacke, S, SWISS FED INST TECHNOL, INST MICRO & OPTOELECTR, DEPT PHYS, CH-1015 LAUSANNE, SWITZERLAND.
ISI Document Delivery No.: UN207
Times Cited: 4
Cited Reference Count: 6
Cited References:
CHRISTEN J, 1992, APPL PHYS LETT, V61, P67
DEVEAUD B, 1994, OPT QUANT ELECTRON, V26, S722
HILLMER H, 1994, OPT QUANT ELECTRON, V26, S691
PFISTER M, 1994, APPL PHYS LETT, V65
RINALDI R, 1994, PHYS REV B, V50, P11795
WALTHER M, 1992, PHYS REV B, V45, P6333
Sp. Iss. SI
Laboratories:




 Record created 2007-08-31, last modified 2018-03-18


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