000110936 001__ 110936
000110936 005__ 20190616105157.0
000110936 0247_ $$2doi$$a10.1103/PhysRevB.54.7643
000110936 022__ $$a0163-1829
000110936 02470 $$2ISI$$aA1996VL14500014
000110936 037__ $$aARTICLE
000110936 245__ $$aTemperature and excitation intensity dependencies of the photoluminescence spectra of GaAs/(AlGa)As disordered superlattices
000110936 260__ $$c1996
000110936 269__ $$a1996
000110936 336__ $$aJournal Articles
000110936 500__ $$aIst nazl fis mat,unita bari,i-70126 bari,italy. ecole polytech fed lausanne,phb ecublens,inst phys appl,ch-1015 lausanne,switzerland. ecole polytech fed lausanne,phb ecublens,inst micro & optoelect,ch-1015 lausanne,switzerland. Capozzi, V, UNIV BARI,DIPARTIMENTO FIS,VIA AMENDOLA 173,I-70126 BARI,ITALY.
000110936 500__ $$aISI Document Delivery No.: VL145
000110936 500__ $$aTimes Cited: 7
000110936 500__ $$aCited Reference Count: 13
000110936 500__ $$aCited References:
000110936 500__ $$aANDERSON PW, 1958, PHYS REV, V109, P1492
000110936 500__ $$aARENT DJ, 1994, PHYS REV B, V49, P11173
000110936 500__ $$aCAPOZZI V, 1991, I PHYS C SER, V123, P195
000110936 500__ $$aCHOMETTE A, 1986, PHYS REV LETT, V57, P1564
000110936 500__ $$aDOW J, 1982, PHYS REV B, V25, P6218
000110936 500__ $$aKOHMOTO M, 1986, PHYS REV B, V34, P5043
000110936 500__ $$aLORUSSO GF, 1996, PHYS REV B, V53, P1018
000110936 500__ $$aLORUSSO GF, 1996, SEMICOND SCI TECH, V11, P308
000110936 500__ $$aLORUSSO GF, 1996, SOLID STATE COMMUN, V98, P705
000110936 500__ $$aMADER KA, 1995, PHYS REV LETT, V74, P2555
000110936 500__ $$aSASAKI A, 1994, APPL PHYS LETT, V64, P2016
000110936 500__ $$aVARSHNI YP, 1967, PHYSICA, V34, P149
000110936 500__ $$aWANG LW, 1996, PHYS REV B, V53, P2010
000110936 520__ $$aThe temperature and excitation intensity dependencies of the photoluminescence (PL) spectra of GaAs/Al0.3Ga0.7As superlattices (SL's) having randomly distributed well widths are studied. Our results indicate that the electronic properties of disordered SL's are similar to those of other disordered semiconductors: at low energies the electronic states are essentially localized, while at higher energies they are extended. Further, the PL spectra feature a disorder-induced fine structure, and they shift to the red with T simply following the reduction of the band gap. The PL efficiency shows a weaker decrease with increasing T than the ordered SL. The dependence of the PL spectra on the excitation intensity shows an anomalous behavior of the disorder-induced fine-structure recombination lines.
000110936 700__ $$aCapozzi, V.
000110936 700__ $$aLorusso, G. F.
000110936 700__ $$0241910$$g107430$$aMartin, D.
000110936 700__ $$aPerna, G.
000110936 700__ $$aStaehli, J. L.$$g106466$$0240869
000110936 773__ $$j54$$tPhysical Review B$$k11$$q7643-7646
000110936 909C0 $$xU10156$$0252003$$pLOEQ
000110936 909CO $$pSB$$particle$$ooai:infoscience.tind.io:110936
000110936 937__ $$aLOEQ-ARTICLE-1996-006
000110936 970__ $$a155/LOEQ
000110936 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000110936 980__ $$aARTICLE