Infoscience

Journal article

Temperature and excitation intensity dependencies of the photoluminescence spectra of GaAs/(AlGa)As disordered superlattices

The temperature and excitation intensity dependencies of the photoluminescence (PL) spectra of GaAs/Al0.3Ga0.7As superlattices (SL's) having randomly distributed well widths are studied. Our results indicate that the electronic properties of disordered SL's are similar to those of other disordered semiconductors: at low energies the electronic states are essentially localized, while at higher energies they are extended. Further, the PL spectra feature a disorder-induced fine structure, and they shift to the red with T simply following the reduction of the band gap. The PL efficiency shows a weaker decrease with increasing T than the ordered SL. The dependence of the PL spectra on the excitation intensity shows an anomalous behavior of the disorder-induced fine-structure recombination lines.

    Note:

    Ist nazl fis mat,unita bari,i-70126 bari,italy. ecole polytech fed lausanne,phb ecublens,inst phys appl,ch-1015 lausanne,switzerland. ecole polytech fed lausanne,phb ecublens,inst micro & optoelect,ch-1015 lausanne,switzerland. Capozzi, V, UNIV BARI,DIPARTIMENTO FIS,VIA AMENDOLA 173,I-70126 BARI,ITALY.

    ISI Document Delivery No.: VL145

    Times Cited: 7

    Cited Reference Count: 13

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    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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