The conduction band offset in ZnSe/GaAs n-p heterodiodes was determined from measurements of the low-temperature tunneling current of photoinjected carriers, We found widely different discontinuities for heterojunctions fabricated with different Zn/Se flux ratios, with conduction band offsets as high as 0.75 eV for Se-rich interfaces, and as low as 0.26 eV for Zn-rich interfaces. (C) 1996 American Institute of Physics.
Title
Tuning of ZnSe-GaAs band discontinuities in heterojunction diodes
Published in
Applied Physics Letters
Volume
69
Issue
21
Pages
3233-3235
Date
1996
ISSN
0003-6951
Note
Infm,i-56126 pisa,italy. infm,lab nazl tasc,i-34012 trieste,italy. univ minnesota,dept chem engn & mat sci,minneapolis,mn 55455. ecole polytech fed lausanne,inst micro & optoelect,ch-1015 lausanne,switzerland. cnr,ist icmat,i-00016 rome,italy. univ trieste,dipartmento fis,i-34127 trieste,italy. Pellegrini, V, SCUOLA NORMALE SUPER PISA,PIAZZA CAVALIERI 7,I-56126 PISA,ITALY.
ISI Document Delivery No.: VT731
Cited Reference Count: 22
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Record creation date
2007-08-31
