Infoscience

Journal article

Tuning of ZnSe-GaAs band discontinuities in heterojunction diodes

The conduction band offset in ZnSe/GaAs n-p heterodiodes was determined from measurements of the low-temperature tunneling current of photoinjected carriers, We found widely different discontinuities for heterojunctions fabricated with different Zn/Se flux ratios, with conduction band offsets as high as 0.75 eV for Se-rich interfaces, and as low as 0.26 eV for Zn-rich interfaces. (C) 1996 American Institute of Physics.

    Keywords: INTERFACE ; HETEROSTRUCTURES

    Note:

    Infm,i-56126 pisa,italy. infm,lab nazl tasc,i-34012 trieste,italy. univ minnesota,dept chem engn & mat sci,minneapolis,mn 55455. ecole polytech fed lausanne,inst micro & optoelect,ch-1015 lausanne,switzerland. cnr,ist icmat,i-00016 rome,italy. univ trieste,dipartmento fis,i-34127 trieste,italy. Pellegrini, V, SCUOLA NORMALE SUPER PISA,PIAZZA CAVALIERI 7,I-56126 PISA,ITALY.

    ISI Document Delivery No.: VT731

    Times Cited: 11

    Cited Reference Count: 22

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    Reference

    Record created on 2007-08-31, modified on 2017-05-12

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