Infoscience

Journal article

Optimum channel thickness of Al0.3Ga0.7As/In0.25Ga0.75As/GaAs heterostructures for electron transport applications

We have grown high-electron mobility transistor structures in the Al0.3Ga0.7As/In0.25Ga0.75As/GaAs material system with In0.25Ga0.75As channel thicknesses in the range 40-200 Angstrom. We have monitored the onset of channel relaxation using Hall mobility measurements, polychromatic cathodoluminescence mapping, time-resolved photoluminescence, transmission electron microscopy, low-frequency noise,and deep-level transient spectroscopy measurements. It appears that the first relaxation symptom, the Stransky-Krastanow growth mode, is observed only by the last three techniques. This shows that the onset of relaxation is not detected by characterization techniques which measure global properties of the material. On the other hand, it is detected by low-frequency noise, deep-level transient spectroscopy, and transmission electron microscopy measurements, which yield an estimation of the defect density in the material. (C) 1996 American Institute of Physics.

    Keywords: MOLECULAR-BEAM EPITAXY ; FIELD-EFFECT TRANSISTORS ; PSEUDOMORPHIC ; GAAS/INGAAS/ALGAAS ; HALL CHARACTERIZATION ; SPECTROSCOPY ; SEMICONDUCTORS ; PERFORMANCE ; NOISE

    Note:

    Haddab, Y, ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECT,CH-1015 LAUSANNE,SWITZERLAND.

    ISI Document Delivery No.: VV267

    Times Cited: 1

    Cited Reference Count: 28

    Cited References:

    ABE M, 1989, IEEE T ELECTRON DEV, V36, P2021

    ARAUJO D, 1994, AM I PHYS C SER, V135, P335

    DODSON BW, 1987, APPL PHYS LETT, V51, P1325

    ELMAN B, 1989, APPL PHYS LETT, V55, P1659

    GERTHSEN D, 1994, AM I PHYS C SER, V146, P143

    HADDAB Y, 1994, EUR SOL STAT DEV RES, V1, P547

    HADDAB Y, 1995, J APPL PHYS, V78, P2509

    HAWKINS ID, 1986, APPL PHYS LETT, V48, P227

    HENDERSON TS, 1986, IEEE ELECTR DEVICE L, V7, P288

    KUKUSHKIN IV, 1988, PHYS REV B, V37, P8509

    LOOK DC, 1994, J APPL PHYS, V76, P328

    MATHEWS JW, 1974, J CRYST GROWTH, V27, P118

    MATTHEWS JW, 1975, J VAC SCI TECHNOL, V12, P126

    MIAUTON L, UNPUB

    MOREIRA MVB, 1992, J VAC SCI TECHNOL B, V10, P103

    MOREIRA MVB, 1992, THESIS ECOLE POLYTEC

    MOREIRA MVB, 1993, J VAC SCI TECHNOL B, V11, P593

    NGUYEN LD, 1989, IEEE T ELECTRON DEV, V36, P833

    PEIRO F, 1994, J ELECTRON MATER, V23, P969

    SHAH J, 1987, APPL PHYS LETT, V52, P1886

    SHAH J, 1988, IEEE J QUANTUM ELECT, V24, P276

    SHI ZM, 1992, THESIS SWISS FEDERAL

    SHI ZM, 1994, IEEE T ELECTRON DEV, V41, P1161

    TURCO F, 1987, REV PHYS APPL, V22, P827

    WEISS S, 1988, SOLID STATE ELECTRON, V31, P1733

    YACOBI BG, 1986, J APPL PHYS, V59, R1

    YAMANAKA K, 1987, J APPL PHYS, V61, P5062

    ZIMMERMANN J, 1992, SEMICOND SCI TECH, V7, B468

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

Fulltext

Related material