Cathodoluminescence and TEM investigations of stress relaxation mechanisms in GaxIn1-xP/InP heterostructures

Two tensile-strained GaxIn1-xP / InP (001) heterostructures (with x = 6.5% and x = 11.2%) have been studied by TEM and cathodoluminescence. In both structures stacking faults and twins, located in the epilayer, have been found preferably along the [(1) over bar 10] direction whereas perfect misfit dislocations have been observed at the interface in the [110] and [(1) over bar 10] directions. The two types of structures differ about the nature of the misfit dislocations and about the thickness of the twins and this is thought to be due to the different stress relaxation amounts in these structures.


Published in:
Microscopy of Semiconducting Materials 1995, 146, 729-732
Year:
1995
Publisher:
Iop Publishing Ltd
ISSN:
0951-3248
Keywords:
Note:
Univ montreal,grp rech phys & technol couches minces,montreal,pq h3c 3a7,canada. ecole polytech fed lausanne,imo,ch-1015 lausanne,switzerland. univ lyon,ura cnrs 172,dpm,f-69622 villeurbanne,france. Cleton, F, UNIV SCI & TECH LILLE FLANDRES ARTOIS,URA CNRS 234,LAB STRUCT & PROPRIETES ETAT SOLIDE,BAT C6,F-59655 VILLENEUVE DASCQ,FRANCE.
ISI Document Delivery No.: BE73Q
Times Cited: 0
Cited Reference Count: 8
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