Infoscience

Book Chapter

Cathodoluminescence and TEM investigations of stress relaxation mechanisms in GaxIn1-xP/InP heterostructures

Two tensile-strained GaxIn1-xP / InP (001) heterostructures (with x = 6.5% and x = 11.2%) have been studied by TEM and cathodoluminescence. In both structures stacking faults and twins, located in the epilayer, have been found preferably along the [(1) over bar 10] direction whereas perfect misfit dislocations have been observed at the interface in the [110] and [(1) over bar 10] directions. The two types of structures differ about the nature of the misfit dislocations and about the thickness of the twins and this is thought to be due to the different stress relaxation amounts in these structures.

    Keywords: MISFIT DISLOCATIONS ; GROWTH

    Note:

    Univ montreal,grp rech phys & technol couches minces,montreal,pq h3c 3a7,canada. ecole polytech fed lausanne,imo,ch-1015 lausanne,switzerland. univ lyon,ura cnrs 172,dpm,f-69622 villeurbanne,france. Cleton, F, UNIV SCI & TECH LILLE FLANDRES ARTOIS,URA CNRS 234,LAB STRUCT & PROPRIETES ETAT SOLIDE,BAT C6,F-59655 VILLENEUVE DASCQ,FRANCE.

    ISI Document Delivery No.: BE73Q

    Times Cited: 0

    Cited Reference Count: 8

    Cited References:

    BENSAADA A, 1992, J APPL PHYS, V71, P1737

    CLETON F, 1993, INT PHYS C SER, V134, P655

    HERBEAUX C, 1989, APPL PHYS LETT, V54, P1004

    KANG JM, 1994, J CRYST GROWTH, V143, P115

    MAREE PMJ, 1987, J APPL PHYS, V62, P4413

    PIKUS GE, 1959, FIZ TVERD TELA, V1, P136

    WAGNER G, 1989, PHYS STATUS SOLIDI A, V112, P519

    ZHU JG, 1990, PHILOS MAG A, V62, P319

    Article

    TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

Fulltext

  • There is no available fulltext. Please contact the lab or the authors.

Related material