Inhomogeneous Strain Relaxation and Defect Distribution of Znte Layers Deposited on (100)Gaas by Metalorganic Vapor-Phase Epitaxy


Published in:
Journal of Applied Physics, 78, 1, 229-235
Year:
1995
ISSN:
0021-8979
Keywords:
Note:
Infm,unita gnsm,i-73100 lecce,italy. ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland. cnr,ist mat elettr,i-73100 lecce,italy. univ padua,dipartimento fis g galilei,i-35100 padua,italy. infm,unita gnsm,i-35100 padua,italy. Lovergine, n, univ lecce,dipartimento sci mat,via per arnesano,i-73100 lecce,italy.
ISI Document Delivery No.: RE582
Times Cited: 14
Cited Reference Count: 12
Cited References:
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DIXON RH, 1990, J APPL PHYS, V68, P1975
DUNSTAN DJ, 1991, APPL PHYS LETT, V59, P3390
DUROSE K, 1993, I PHYS C SER, V134, P581
ETGENS VH, 1993, PHYS REV B, V47, P10607
FELDMAN LC, 1982, MATERIALS ANAL ION C
FELDMAN RD, 1988, J APPL PHYS, V64, P1191
LOVERGINE N, 1993, APPL PHYS LETT, V63, P3452
LOVERGINE N, 1993, J CRYST GROWTH, V128, P633
MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118
PATRAT G, 1990, SOLID STATE COMMUN, V74, P433
SCHWARTZMAN AF, 1991, J ELECTRON MATER, V20, P805
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