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Journal article

Inhomogeneous Strain Relaxation and Defect Distribution of Znte Layers Deposited on (100)Gaas by Metalorganic Vapor-Phase Epitaxy

    Keywords: MISFIT DISLOCATIONS ; GAAS ; GROWTH

    Note:

    Infm,unita gnsm,i-73100 lecce,italy. ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland. cnr,ist mat elettr,i-73100 lecce,italy. univ padua,dipartimento fis g galilei,i-35100 padua,italy. infm,unita gnsm,i-35100 padua,italy. Lovergine, n, univ lecce,dipartimento sci mat,via per arnesano,i-73100 lecce,italy.

    ISI Document Delivery No.: RE582

    Times Cited: 14

    Cited Reference Count: 12

    Cited References:

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    DUROSE K, 1993, I PHYS C SER, V134, P581

    ETGENS VH, 1993, PHYS REV B, V47, P10607

    FELDMAN LC, 1982, MATERIALS ANAL ION C

    FELDMAN RD, 1988, J APPL PHYS, V64, P1191

    LOVERGINE N, 1993, APPL PHYS LETT, V63, P3452

    LOVERGINE N, 1993, J CRYST GROWTH, V128, P633

    MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118

    PATRAT G, 1990, SOLID STATE COMMUN, V74, P433

    SCHWARTZMAN AF, 1991, J ELECTRON MATER, V20, P805

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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