We report on the realization of InGaAs-lnGaAsP separate confinement heterostructure multiple quantum well lasers grown by chemical beam epitaxy. We discuss key growth parameters and characterization by secondary-ion mass spectroscopy, transmission electron microscopy, electron-beam-induced current, and x-ray diffraction. Threshold current densities as low as 450 A/cm(2) are obtained on lasers with five strained InGaAs quantum wells, along with internal quantum efficiencies of 90% and optical losses of 5 cm(-1).
Titre
Chemical Beam Epitaxy of 1.55-Mu-M Separate-Confinement Heterostructure Multiple-Quantum-Well Laser-Diodes
Publié dans
Optical Engineering
Volume
34
Numéro
7
Pages
1993-1999
Date
1995
ISSN
0091-3286
Note
Carlin, jfr, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: RJ305
Cited Reference Count: 23
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Date de création de la notice
2007-08-31
