Chemical Beam Epitaxy of 1.55-Mu-M Separate-Confinement Heterostructure Multiple-Quantum-Well Laser-Diodes

We report on the realization of InGaAs-lnGaAsP separate confinement heterostructure multiple quantum well lasers grown by chemical beam epitaxy. We discuss key growth parameters and characterization by secondary-ion mass spectroscopy, transmission electron microscopy, electron-beam-induced current, and x-ray diffraction. Threshold current densities as low as 450 A/cm(2) are obtained on lasers with five strained InGaAs quantum wells, along with internal quantum efficiencies of 90% and optical losses of 5 cm(-1).


Published in:
Optical Engineering, 34, 7, 1993-1999
Year:
1995
ISSN:
0091-3286
Keywords:
Note:
Carlin, jfr, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: RJ305
Times Cited: 2
Cited Reference Count: 23
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