Infoscience

Journal article

Chemical Beam Epitaxy of 1.55-Mu-M Separate-Confinement Heterostructure Multiple-Quantum-Well Laser-Diodes

We report on the realization of InGaAs-lnGaAsP separate confinement heterostructure multiple quantum well lasers grown by chemical beam epitaxy. We discuss key growth parameters and characterization by secondary-ion mass spectroscopy, transmission electron microscopy, electron-beam-induced current, and x-ray diffraction. Threshold current densities as low as 450 A/cm(2) are obtained on lasers with five strained InGaAs quantum wells, along with internal quantum efficiencies of 90% and optical losses of 5 cm(-1).

    Keywords: GAINASP ; INP ; QUANTUM WELL ; LASER ; TRANSMISSION ELECTRON MICROSCOPY ; ELECTRON-BEAM-INDUCED CURRENT ; CHEMICAL BEAM EPITAXY ; GROWTH ; CBE

    Note:

    Carlin, jfr, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.

    ISI Document Delivery No.: RJ305

    Times Cited: 2

    Cited Reference Count: 23

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    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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