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Journal article

Optical Amplification and Its Saturation in Semiconductor Quantum-Wells

The spontaneous and stimulated emissions of strongly excited GaAs/(Ga,Al)As quantum wells are investigated in the one-dimensional optical amplifier geometry, using the variable-stripe-length method. The optical amplification and its saturation are studied by monitoring the spectra of spontaneous and amplified luminescence as a function of the position on the stripe. The deduced experimental spatial dependences of carrier and luminous densities are found to agree in a semiquantitative way with the numerical solutions of the amplifier equation, obtained by assuming steady state and thermal carrier distributions. Saturation of optical amplification is caused by two effects: (1) carrier depopulation through stimulated recombination of electron-hole pairs, and (2) loss of light caused by scattering at sample defects and by imperfect wave guiding.

    Keywords: OPTICAL AMPLIFICATION ; QUANTUM WELLS ; EH PLASMA ; LUMINESCENCE SPECTRA ; ELECTRON-HOLE PLASMA ; SPONTANEOUS EMISSION ; GAIN ; LASERS ; SPECTRA ; DEPENDENCE ; INDEX ; TIME

    Note:

    Ecole polytech fed lausanne,inst phys appl,ph ecublens,ch-1015 lausanne,switzerland. Bongiovanni, g, univ cagliari,dipartimento sci fis,via osped 72,i-09100 cagliari,italy.

    ISI Document Delivery No.: RJ305

    Times Cited: 3

    Cited Reference Count: 37

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    Record created on 2007-08-31, modified on 2016-08-08

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