The incorporation of In in the growth of crescent-shaped In0.12Ga0.88As quantum wires embedded in (AlAs)(4)(GaAs)(8) superlattice barriers is studied in atomic detail using cross-sectional scanning tunneling microscopy. It is found that the In distribution in both the surface and the first subsurface layer can be atomically resolved in the empty- and filled-state images, respectively. Strong In segregation is seen at the InGaAs/GaAs interfaces, but neither an expected enhancement of the In concentration at the center of the quantum wire compared to the planar quantum well nor In clustering beyond the statistical expectation is observed. (C) 1995 American Institute of Physics.
Title
Indium Distribution in Ingaas Quantum Wires Observed with the Scanning Tunneling Microscope
Published in
Applied Physics Letters
Volume
67
Issue
10
Pages
1459-1461
Date
1995
Note
Ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland. epfl,imo dp,ch-1015 lausanne,switzerland. Pfister, m, ibm corp,div res,zurich res lab,ch-8803 ruschlikon,switzerland.
ISI Document Delivery No.: RR440
Cited References:
FEENSTRA RM, 1987, PHYS REV LETT, V58, P1192
KAPON E, 1993, OPTOELECTRONICS, V8, P429
MARTI U, 1991, MICROELECTRON ENG, V13, P391
MASSIES J, 1987, J CRYST GROWTH, V80, P307
PFISTER M, UNPUB
PFISTER M, 1994, APPL PHYS LETT, V65, P1168
SALEMINK HWM, 1993, PHYS REV B, V47, P16044
ZHENG JF, 1994, PHYS REV LETT, V72, P2414 NR 8 TC 39 PU AMER INST PHYSICS PI WOODBURY PA CIRCULATION FULFILLMENT DIV, 500 SUNNYSIDE BLVD, WOODBURY, NY 11797-2999 SN 0003-6951
Record creation date
2007-08-31
