Indium Distribution in Ingaas Quantum Wires Observed with the Scanning Tunneling Microscope

The incorporation of In in the growth of crescent-shaped In0.12Ga0.88As quantum wires embedded in (AlAs)(4)(GaAs)(8) superlattice barriers is studied in atomic detail using cross-sectional scanning tunneling microscopy. It is found that the In distribution in both the surface and the first subsurface layer can be atomically resolved in the empty- and filled-state images, respectively. Strong In segregation is seen at the InGaAs/GaAs interfaces, but neither an expected enhancement of the In concentration at the center of the quantum wire compared to the planar quantum well nor In clustering beyond the statistical expectation is observed. (C) 1995 American Institute of Physics.


Published in:
Applied Physics Letters, 67, 10, 1459-1461
Year:
1995
Keywords:
Note:
Ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland. epfl,imo dp,ch-1015 lausanne,switzerland. Pfister, m, ibm corp,div res,zurich res lab,ch-8803 ruschlikon,switzerland.
ISI Document Delivery No.: RR440
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Laboratories:




 Record created 2007-08-31, last modified 2018-01-28


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