Infoscience

Journal article

Optical spectroscopy of semiconductor quantum wires

We investigated the optical properties of excitons in quasi-one-dimensional semiconductor quantum structures by photoluminescence and photoluminescence excitation: High-quality GaAs/AlxGa1-xAs heterostructures were grown using low-pressure organometallic chemical vapour deposition (OMCVD) on non-planar substrates. The experimentally observed subband separations are in good agreement with a theoretical calculation of the quantum-confined eigenstates, which includes the mapping of the crescent-shaped wire obtained on TEM micrographs. Additionally, a temperature dependence study of excitonic spectra reveals the dominant role of potential and size fluctuations in localizing the excitons.

    Keywords: HETEROSTRUCTURES ; EMISSION

    Note:

    Oberli, DY, ECOLE POLYTECH FED LAUSANNE,DEPT PHYS,CH-1015 LAUSANNE,SWITZERLAND.

    ISI Document Delivery No.: UB294

    Times Cited: 10

    Cited Reference Count: 10

    Cited References:

    BASTARD G, 1991, SOLID STATE PHYS, V44, P229

    BOCKELMANN U, 1991, EUROPHYS LETT, V16, P601

    BOCKELMANN U, 1992, PHYS REV B, V45, P1888

    CINGOLANI R, 1993, RIV NUOVO CIMENTO, V16, P1

    CITRIN DS, 1991, PHYS REV B, V43, P11703

    GRUNDMANN M, 1955, INT J NONLINEAR OPT, V4, P99

    GUSTAFSSON A, UNPUB

    KAPON E, 1989, PHYS REV LETT, V63, P430

    RINALDI R, 1994, PHYS REV LETT, V73, P2899

    SERCEL PC, 1991, PHYS REV B, V44, P5681

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

Fulltext

  • There is no available fulltext. Please contact the lab or the authors.

Related material