Our interest is centred on the very thin layers consisting of only one or a few monolayers of InAs. The optical transition energies, measured by photoluminescence spectroscopy, are compared with theoretical calculations obtained in envelope function approximation and through an empirical tight-binding method. This comparison yields values for the not well-known valence band offset at the InAs/InP interface, and the luminescence lines observed at different energies could be assigned to layers between one and 13 monolayers thick.
Title
Optical study on ultrathin InAs/InP single quantum wells
Published in
Nuovo Cimento Della Societa Italiana Di Fisica D-Condensed Matter Atomic Molecular and Chemical Physics Fluids Plasmas Biophysics
Volume
17
Issue
11-12
Pages
1367-1370
Date
1995
ISSN
0392-6737
Note
Ecole normale super lyon, cecam, f-69364 lyon 07, france. univ pavia, ist fis a volta, i-27100 pavia, italy. ecole polytech fed lausanne, phb ecublens, inst micro & optoelectr, ch-1015 lausanne, switzerland. Bitz, A, ECOLE POLYTECH FED LAUSANNE, PHB ECUBLENS, INST PHYS APPL, CH-1015 LAUSANNE, SWITZERLAND.
ISI Document Delivery No.: UB294
Cited Reference Count: 13
Cited References:
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Record creation date
2007-08-31