Optical study on ultrathin InAs/InP single quantum wells

Our interest is centred on the very thin layers consisting of only one or a few monolayers of InAs. The optical transition energies, measured by photoluminescence spectroscopy, are compared with theoretical calculations obtained in envelope function approximation and through an empirical tight-binding method. This comparison yields values for the not well-known valence band offset at the InAs/InP interface, and the luminescence lines observed at different energies could be assigned to layers between one and 13 monolayers thick.


Published in:
Nuovo Cimento Della Societa Italiana Di Fisica D-Condensed Matter Atomic Molecular and Chemical Physics Fluids Plasmas Biophysics, 17, 11-12, 1367-1370
Year:
1995
ISSN:
0392-6737
Keywords:
Note:
Ecole normale super lyon, cecam, f-69364 lyon 07, france. univ pavia, ist fis a volta, i-27100 pavia, italy. ecole polytech fed lausanne, phb ecublens, inst micro & optoelectr, ch-1015 lausanne, switzerland. Bitz, A, ECOLE POLYTECH FED LAUSANNE, PHB ECUBLENS, INST PHYS APPL, CH-1015 LAUSANNE, SWITZERLAND.
ISI Document Delivery No.: UB294
Times Cited: 13
Cited Reference Count: 13
Cited References:
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VANDEWALLE CG, 1988, MATER RES SOC S P, V102, P565
WALDROP JR, 1991, J APPL PHYS, V69, P372
WYSER A, 1994, THESIS
Laboratories:




 Record created 2007-08-31, last modified 2018-03-18


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