Infoscience

Journal article

Optical study on ultrathin InAs/InP single quantum wells

Our interest is centred on the very thin layers consisting of only one or a few monolayers of InAs. The optical transition energies, measured by photoluminescence spectroscopy, are compared with theoretical calculations obtained in envelope function approximation and through an empirical tight-binding method. This comparison yields values for the not well-known valence band offset at the InAs/InP interface, and the luminescence lines observed at different energies could be assigned to layers between one and 13 monolayers thick.

    Keywords: EXCITONS

    Note:

    Ecole normale super lyon, cecam, f-69364 lyon 07, france. univ pavia, ist fis a volta, i-27100 pavia, italy. ecole polytech fed lausanne, phb ecublens, inst micro & optoelectr, ch-1015 lausanne, switzerland. Bitz, A, ECOLE POLYTECH FED LAUSANNE, PHB ECUBLENS, INST PHYS APPL, CH-1015 LAUSANNE, SWITZERLAND.

    ISI Document Delivery No.: UB294

    Times Cited: 13

    Cited Reference Count: 13

    Cited References:

    ANDREANI LC, 1990, PHYS REV B, V42, P8928

    GAMMON D, 1991, PHYS REV LETT, V67, P1547

    KE SH, 1994, PHYS REV B, V49, P10495

    KOPF RF, 1991, APPL PHYS LETT, V58, P631

    MADER KA, 1992, P INT M OPT EXC CONF

    MIAUTON L, 1995, THESIS

    OHLER C, 1994, PHYS REV B, V50, P7833

    PEOPLE R, 1990, PHYS REV B, V41, P8431

    RUDRA A, 1994, J CRYST GROWTH, V136, P1

    STORCH DR, 1992, J APPL PHYS, V72, P3041

    VANDEWALLE CG, 1988, MATER RES SOC S P, V102, P565

    WALDROP JR, 1991, J APPL PHYS, V69, P372

    WYSER A, 1994, THESIS

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

Fulltext

Related material