The cathodoluminescence mode of the scanning electron microscope is used for the first time to investigate the lateral dependence of the electron-hole pair generation by the electron beam of the scanning electron microscope m semiconducting material. A multiple-quantum-well structure acts as a detector to measure the relative number of generated carriers by their radiative recombination. The method, which avoids the effect of carrier diffusion, enhances the resolution of the measurement to 50 nm and should prove a help for the quantitative interpretation of cathodoluminescence evaluations.
Title
Determination of the Lateral Distribution of Electron-Hole Pairs Generated by an Electron-Beam in Al0.4Ga0.6As by Cathodoluminescence
Published in
Materials Science and Engineering B-Solid State Materials for Advanced Technology
Volume
24
Issue
1-3
Pages
124-129
Date
1994
ISSN
0921-5107
Note
Univ leipzig,fachbereich phys,o-7010 leipzig,germany. ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: NJ786
Cited Reference Count: 13
Cited References:
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DONOLATO C, 1981, PHYS STATUS SOLIDI A, V65, P649
GOLDSTEIN JI, 1992, SCANNING ELECTRON MI
KONNIKOV SG, 1988, SOV PHYS SEMICOND, V21, P1229
LEAMY HJ, 1982, J APPL PHYS, V53, R51
NEWBURY DE, 1986, ADV SCANNING ELECTRO
OELGART G, 1984, PHYS STATUS SOLIDI A, V85, P205
PETROV VI, 1991, SCANNING, V13, P410
PETROV VI, 1992, PHYS STATUS SOLIDI A, V133, P189
PHANG JCH, 1992, IEEE T ELECTRON DEV, V39, P782
REIMER L, 1985, SCANNING ELECTRON MI
WERNER U, 1988, J PHYS D, V21, P116
YACOBI BG, 1990, CATHODOLUMINESCENCE
Record creation date
2007-08-31
