Infoscience

Journal article

Determination of the Lateral Distribution of Electron-Hole Pairs Generated by an Electron-Beam in Al0.4ga0.6as by Cathodoluminescence

The cathodoluminescence mode of the scanning electron microscope is used for the first time to investigate the lateral dependence of the electron-hole pair generation by the electron beam of the scanning electron microscope m semiconducting material. A multiple-quantum-well structure acts as a detector to measure the relative number of generated carriers by their radiative recombination. The method, which avoids the effect of carrier diffusion, enhances the resolution of the measurement to 50 nm and should prove a help for the quantitative interpretation of cathodoluminescence evaluations.

    Keywords: ENERGY LOSS DISTRIBUTION ; MICROSCOPY ; COLLECTION ; MODEL

    Note:

    Univ leipzig,fachbereich phys,o-7010 leipzig,germany. ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.

    ISI Document Delivery No.: NJ786

    Times Cited: 6

    Cited Reference Count: 13

    Cited References:

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    DONOLATO C, 1981, PHYS STATUS SOLIDI A, V65, P649

    GOLDSTEIN JI, 1992, SCANNING ELECTRON MI

    KONNIKOV SG, 1988, SOV PHYS SEMICOND, V21, P1229

    LEAMY HJ, 1982, J APPL PHYS, V53, R51

    NEWBURY DE, 1986, ADV SCANNING ELECTRO

    OELGART G, 1984, PHYS STATUS SOLIDI A, V85, P205

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    PETROV VI, 1992, PHYS STATUS SOLIDI A, V133, P189

    PHANG JCH, 1992, IEEE T ELECTRON DEV, V39, P782

    REIMER L, 1985, SCANNING ELECTRON MI

    WERNER U, 1988, J PHYS D, V21, P116

    YACOBI BG, 1990, CATHODOLUMINESCENCE

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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