000110869 001__ 110869
000110869 005__ 20180317094519.0
000110869 022__ $$a0018-0238
000110869 02470 $$2ISI$$aA1994NN69300014
000110869 037__ $$aARTICLE
000110869 245__ $$aImprovement of Crystal Quality of Epitaxial Silicon-Germanium Alloy Layers by Carbon Additions
000110869 260__ $$c1994
000110869 269__ $$a1994
000110869 336__ $$aJournal Articles
000110869 500__ $$aInsa,phys matiere lab,f-69621 villeurbanne,france. Mi, j, epfl,inst micro & optoelectr,ch-1015 lausanne,switzerland.
000110869 500__ $$aISI Document Delivery No.: NN693
000110869 500__ $$aTimes Cited: 0
000110869 500__ $$aCited Reference Count: 5
000110869 500__ $$aCited References: 
000110869 500__ $$a     COPEL M, 1989, PHYS REV LETT, V63, P632
000110869 500__ $$a     EBERL K, 1992, APPL PHYS LETT, V60, P3033
000110869 500__ $$a     IM S, 1993, APPL PHYS LETT, V63, P929
000110869 500__ $$a     STINESPRING CD, 1989, J APPL PHYS, V65, P173
000110869 500__ $$a     STRANE JW, 1993, APPL PHYS LETT, V63, P2786
000110869 520__ $$aImproved Si1-xGex/Si hetero-epitaxy has been achieved by RTCVD in the presence of small amounts of C3H8 during growth. Carbon presumably scavenges oxygen and acts as a surfactant to inhibit three dimensional growth.
000110869 6531_ $$aGROWTH
000110869 700__ $$aMi, J.
000110869 700__ $$aLetourneau, P.
000110869 700__ $$0240830$$aGaniere, J. D.$$g105197
000110869 700__ $$aGailhanou, M.
000110869 700__ $$aDutoit, M.
000110869 700__ $$aDubois, C.
000110869 700__ $$aDupuy, J. C.
000110869 700__ $$aBremond, G.
000110869 773__ $$j67$$k2$$q219-220$$tHelvetica Physica Acta
000110869 909CO $$ooai:infoscience.tind.io:110869$$particle$$pSB
000110869 909C0 $$0252003$$pLOEQ$$xU10156
000110869 937__ $$aLOEQ-ARTICLE-1994-007
000110869 970__ $$a202/LOEQ
000110869 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000110869 980__ $$aARTICLE