Infoscience

Journal article

Characterization of Lattice-Matched Single In1-Xgaxasyp1-Y Quantum-Wells Grown by Conventional Liquid-Phase Epitaxy

In this letter the liquid phase epitaxial growth of In0.71Ga0.29As0.68P0.32 (lambda(g) = 1.32 mum) single quantum well structures lattice matched to (001) InP substrates is reported. The electrical and optical confinement was formed either by InP or In0.88Ga0.12As0.26 p0.74 (lambda(g) = 1.05 mum). Low-temperature photoluminescence was employed to prove the samples capable of displaying quantum size effects. Energy upshifts up to 125 meV were measured for InP-clad quantum wells of about 50 angstrom thickness. All multilayered stacks originate from step-cooling growth cycles in an ordinary linear slider boat. Streamlining of the experimental conditions has led to a conspicuous decrease in the FWHM values of the blueshift signals.

    Keywords: INP ; INGAASP ; LPE ; GAXIN1-XASYP1-Y

    Note:

    Univ leipzig,fac phys,d-04103 leipzig,germany. swiss fed inst technol,ph ecublens,inst appl phys,ch-1015 lausanne,switzerland. Behcer, s, univ leipzig,fac chem & mineral,linnestr 3,d-04103 leipzig,germany.

    ISI Document Delivery No.: PA827

    Times Cited: 0

    Cited Reference Count: 17

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    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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