We have measured phase modulation in the first chemical beam epitaxy grown InGaAsP/InP barrier, reservoir, and quantum well electron transfer structures. We obtain a negative refractive index change, DELTAn, similar to that found in the InGaAs/InAlAs system. Using new designs to reduce the leakage current in this material system, we obtain a leakage current <1 A/CM2. Our results show an unexpected negative DELTAn for both positive and negative bias, which we explain using calculations of the wave function.
Title
Phase Modulation in Ingaasp Barrier, Reservoir, and Quantum-Well Electron-Transfer Structures, Grown by Chemical Beam Epitaxy
Published in
Applied Physics Letters
Volume
65
Issue
6
Pages
731-733
Date
1994
ISSN
0003-6951
Note
Philipps univ marburg,fachbereich phys,d-35032 marburg,germany. Glick, m, swiss fed inst technol,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: PA919
Cited Reference Count: 10
Cited References:
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MONNARD R, UNPUB
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WEGENER M, 1989, APPL PHYS LETT, V55, P583
WEGNER M, 1990, PHYS REV B, V41, P3097
ZUCKER JE, 1990, IEEE PHOTONIC TECH L, V2, P29
ZUCKER JE, 1993, MICROW OPT TECHN LET, V6, P6
Record creation date
2007-08-31
