Infoscience

Journal article

Phase Modulation in Ingaasp Barrier, Reservoir, and Quantum-Well Electron-Transfer Structures, Grown by Chemical Beam Epitaxy

We have measured phase modulation in the first chemical beam epitaxy grown InGaAsP/InP barrier, reservoir, and quantum well electron transfer structures. We obtain a negative refractive index change, DELTAn, similar to that found in the InGaAs/InAlAs system. Using new designs to reduce the leakage current in this material system, we obtain a leakage current <1 A/CM2. Our results show an unexpected negative DELTAn for both positive and negative bias, which we explain using calculations of the wave function.

    Keywords: INP

    Note:

    Philipps univ marburg,fachbereich phys,d-35032 marburg,germany. Glick, m, swiss fed inst technol,inst micro & optoelectr,ch-1015 lausanne,switzerland.

    ISI Document Delivery No.: PA919

    Times Cited: 1

    Cited Reference Count: 10

    Cited References:

    AGRAWAL N, 1992, APPL PHYS LETT, V61, P249

    CARLIN JF, 1993, J CRYST GROWTH, V131, P387

    GLICK M, 1993, EUROPEAN C INTEGRATE, P14

    MONNARD R, UNPUB

    SUGIURA H, 1992, J CRYST GROWTH, V121, P579

    WANG J, 1993, J APPL PHYS, V73, P9

    WEGENER M, 1989, APPL PHYS LETT, V55, P583

    WEGNER M, 1990, PHYS REV B, V41, P3097

    ZUCKER JE, 1990, IEEE PHOTONIC TECH L, V2, P29

    ZUCKER JE, 1993, MICROW OPT TECHN LET, V6, P6

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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