Phase Modulation in Ingaasp Barrier, Reservoir, and Quantum-Well Electron-Transfer Structures, Grown by Chemical Beam Epitaxy

We have measured phase modulation in the first chemical beam epitaxy grown InGaAsP/InP barrier, reservoir, and quantum well electron transfer structures. We obtain a negative refractive index change, DELTAn, similar to that found in the InGaAs/InAlAs system. Using new designs to reduce the leakage current in this material system, we obtain a leakage current <1 A/CM2. Our results show an unexpected negative DELTAn for both positive and negative bias, which we explain using calculations of the wave function.


Published in:
Applied Physics Letters, 65, 6, 731-733
Year:
1994
ISSN:
0003-6951
Keywords:
Note:
Philipps univ marburg,fachbereich phys,d-35032 marburg,germany. Glick, m, swiss fed inst technol,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: PA919
Times Cited: 1
Cited Reference Count: 10
Cited References:
AGRAWAL N, 1992, APPL PHYS LETT, V61, P249
CARLIN JF, 1993, J CRYST GROWTH, V131, P387
GLICK M, 1993, EUROPEAN C INTEGRATE, P14
MONNARD R, UNPUB
SUGIURA H, 1992, J CRYST GROWTH, V121, P579
WANG J, 1993, J APPL PHYS, V73, P9
WEGENER M, 1989, APPL PHYS LETT, V55, P583
WEGNER M, 1990, PHYS REV B, V41, P3097
ZUCKER JE, 1990, IEEE PHOTONIC TECH L, V2, P29
ZUCKER JE, 1993, MICROW OPT TECHN LET, V6, P6
Laboratories:




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