In a recent paper, we measured the hole diffusion length in a single quantum well (SQW) by a novel method using SEM-cathodoluminescence, assuming that the carriers diffuse only in the SQW. This assumption needs to be checked. Therefore, we present here a model for the carrier transport in the SQW and in the bulk barrier to deduce the lateral hole distribution in both layers. The main lateral transport is shown to be carried by the holes in the QW (2D diffusion) due to their confinement in the well.
Title
Measurements of the Diffusion Length in Gaas/Algaas Quantum-Well (Qw) Structures by Cathodoluminescence - Comparison of the Bulk and Qw Diffusion Channels
Published in
Microscopy of Semiconducting Materials 1993
Series
Institute of Physics Conference Series
Pages
643-646
Date
1993
Publisher
Iop Publishing Ltd
ISSN
0951-3248
Note
Univ leipzig,fachbereich phys,o-7010 leipzig,germany. univ cadiz,dept ciencia mat,e-11510 puerto real,spain. Araujo, d, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: BA56Y
Cited Reference Count: 10
Cited References:
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HATTORI K, 1987, APPL PHYS LETT, V51, P1259
HILLMER H, 1988, APPL PHYS LETT, V53, P1937
HOPFEL RA, 1988, PHYS REV B, V37, P6941
LEAMY HJ, 1982, J APPL PHYS, V53, R51
SAKAKI H, 1987, APPL PHYS LETT, V51, P1934
ZAREM HA, 1989, APPL PHYS LETT, V55, P1647
Article
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Record creation date
2007-08-31