Infoscience

Journal article

Lateral Transport in Gaas/Algaas Quantum-Wells

The lateral transport of excess carriers in metal organic chemical vapor deposition grown GaAs/AlxGa1-xAs(x=0.5) 20 angstrom thick single quantum well structures is studied by cathodoluminescence (CL) between 5 K less-than-or-equal-to T less-than-or-equal-to 170 K. Impurity and native defect related transitions are found to take place around grown-in dislocations where well thickness variations are also found. The CL intensity of free excitons and/or transitions involving impurities and native defects is measured as a function of distance from the dislocation to the point of excitation. Using a simple diffusion model, we are able to determine the hole diffusion length, L=1.5 mum, in slightly n-doped SQW. This represents a novel method for the direct determination of the diffusion length ih sufficiently defect-free material.

    Keywords: GAASP

    Note:

    Ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland. univ leipzig,facbereich phys,o-7010 leipzig,germany.

    ISI Document Delivery No.: LE985

    Times Cited: 6

    Cited Reference Count: 8

    Cited References:

    ARAUJO D, UNPUB

    BIMBERG D, 1987, J VAC SCI TECHNOL B, V5, P1191

    HILLMER H, 1988, APPL PHYS LETT, V53, P1937

    HILLMER H, 1990, PHYS REV B, V42, P3220

    LANDOLTBORNSTEI.X, 1982, PHYSICS GROUP 4 3 5

    OELGART G, 1983, PHYS STATUS SOLIDI A, V75, P547

    OELGART G, 1984, PHYS STATUS SOLIDI A, V85, P205

    OELGART G, 1992, J APPL PHYS, V71, P1552

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

Fulltext

Related material