Lateral Transport in Gaas/Algaas Quantum-Wells

The lateral transport of excess carriers in metal organic chemical vapor deposition grown GaAs/AlxGa1-xAs(x=0.5) 20 angstrom thick single quantum well structures is studied by cathodoluminescence (CL) between 5 K less-than-or-equal-to T less-than-or-equal-to 170 K. Impurity and native defect related transitions are found to take place around grown-in dislocations where well thickness variations are also found. The CL intensity of free excitons and/or transitions involving impurities and native defects is measured as a function of distance from the dislocation to the point of excitation. Using a simple diffusion model, we are able to determine the hole diffusion length, L=1.5 mum, in slightly n-doped SQW. This represents a novel method for the direct determination of the diffusion length ih sufficiently defect-free material.


Published in:
Applied Physics Letters, 62, 23, 2992-2994
Year:
1993
ISSN:
0003-6951
Keywords:
Note:
Ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland. univ leipzig,facbereich phys,o-7010 leipzig,germany.
ISI Document Delivery No.: LE985
Times Cited: 6
Cited Reference Count: 8
Cited References:
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OELGART G, 1992, J APPL PHYS, V71, P1552
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 Record created 2007-08-31, last modified 2018-03-17


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