The optical properties of low pressure metal organic vapor deposition grown GaAs/AlxGa1-xAs (x = 0.5) single quantum well structures (SQW) with grown-in dislocations (GD) were studied by low temperature cathodoluminescence (CL) and photoluminescence (PL). High luminescence efficiency around the GD was observed and attributed to impurity decoration. CL spectra show a region surrounding the GD that consists of Si impurities and native defects in the SQW and barrier layers. The diameter of this region was found to be in the order of 1 mum using spectrally resolved CL micrographs.
Title
Cathodoluminescence and Photoluminescence Studies of Dislocations in Gaas/Algaas Quantum-Wells
Published in
Journal of Applied Physics
Volume
74
Issue
3
Pages
1997-2003
Date
1993
ISSN
0021-8979
Note
Ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland. univ leipzig,dept phys,o-7010 leipzig,germany.
ISI Document Delivery No.: LQ127
Cited Reference Count: 24
Cited References:
ALT HC, 1988, APPL PHYS LETT, V52, P1661
ANDREANI LC, 1990, PHYS REV B, V42, P8929
ARAUJO D, 1991, I PHYS C SER, V117, P703
ARAUJO D, 1993, APPL PHYS LETT, V62, P2992
BOHM K, 1979, J APPL PHYS, V50, P5453
BOURGOIN JC, 1988, J APPL PHYS, V64, R65
BRIONES F, 1982, J ELECTRON MATER, V11, P847
DING J, 1979, APPL PHYS LETT, V50, P5453
EINEVOLL GT, 1990, PHYS REV B, V41, P1447
EINEVOLL GT, 1992, COMMUNICATION
FRAIZZOLI S, 1990, PHYS REV B, V41, P5096
FRIGERI C, 1989, J APPL PHYS, V65, P4646
ILLEGEMS M, 1985, TECHNOLOGY PHYSICS M, P83
KY NH, 1991, J APPL PHYS, V69, P7585
KY NH, 1991, J APPL PHYS, V70, P3887
OELGART G, 1992, J APPL PHYS, V71, P1551
OLEGART G, INPRESS J APPL PHYS
PEARAH PJ, 1985, APPL PHYS LETT, V47, P166
RICHTER W, 1986, ADV SOLID STATE PHYS, V26, P335
SKROMME BJ, 1988, SOLID STATE COMMUN, V66, P543
VANDEVEN J, 1986, J APPL PHYS, V60, P3735
VISSER EP, 1990, J APPL PHYS, V68, P4242
WEYHER JL, 1986, J CRYST GROWTH, V78, P191
XU HQ, 1990, PHYS REV B, V41, P5979
Record creation date
2007-08-31
