Bistable Switching in a Nonlinear Bragg Reflector

Numerical simulations and experimental results are reported on bistable switching in a semiconductor nonlinear vertical Bragg reflector. An improved structure with an additional linear rear mirror and a phase-adjusting layer was predicted to have lower threshold for bistability than a Fabry-Perot type device. The experimental observation of bistable switching in a nonlinear Bragg reflector is reported. Achieved threshold was comparable with a nonlinear Fabry-Perot device; the simpler structure of a nonlinear Bragg device may represent an advantage with respect to growth tolerances.


Published in:
Applied Physics Letters, 63, 16, 2177-2179
Year:
1993
ISSN:
0003-6951
Keywords:
Note:
Tech univ nova scotia,dept elect engn,halifax b3j 2x4,ns,canada. swiss fed inst technol,inst micro & optoelectr,ch-1015 lausanne,switzerland. Acklin, b, univ neuchatel,inst microtechnol,ch-2000 neuchatel,switzerland.
ISI Document Delivery No.: MC050
Times Cited: 13
Cited Reference Count: 8
Cited References:
ACKLIN B, UNPUB
CADA M, 1992, APPL PHYS LETT, V60, P404
CHAVEZPIRSON A, 1986, INT QUANTUM ELECTRON, P13
GIBBS HM, 1979, APPL PHYS LETT, V35, P451
GIBBS HM, 1985, OPTICAL BISTABILITY
HE J, 1992, APPL PHYS LETT, V61, P2150
MCCALL SL, 1986, C LASERS ELECTROOPTI, P364
MILLER DAB, 1981, IEEE J QUANTUM ELECT, V17, P306
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