Infoscience

Journal article

Bistable Switching in a Nonlinear Bragg Reflector

Numerical simulations and experimental results are reported on bistable switching in a semiconductor nonlinear vertical Bragg reflector. An improved structure with an additional linear rear mirror and a phase-adjusting layer was predicted to have lower threshold for bistability than a Fabry-Perot type device. The experimental observation of bistable switching in a nonlinear Bragg reflector is reported. Achieved threshold was comparable with a nonlinear Fabry-Perot device; the simpler structure of a nonlinear Bragg device may represent an advantage with respect to growth tolerances.

    Keywords: BISTABILITY

    Note:

    Tech univ nova scotia,dept elect engn,halifax b3j 2x4,ns,canada. swiss fed inst technol,inst micro & optoelectr,ch-1015 lausanne,switzerland. Acklin, b, univ neuchatel,inst microtechnol,ch-2000 neuchatel,switzerland.

    ISI Document Delivery No.: MC050

    Times Cited: 13

    Cited Reference Count: 8

    Cited References:

    ACKLIN B, UNPUB

    CADA M, 1992, APPL PHYS LETT, V60, P404

    CHAVEZPIRSON A, 1986, INT QUANTUM ELECTRON, P13

    GIBBS HM, 1979, APPL PHYS LETT, V35, P451

    GIBBS HM, 1985, OPTICAL BISTABILITY

    HE J, 1992, APPL PHYS LETT, V61, P2150

    MCCALL SL, 1986, C LASERS ELECTROOPTI, P364

    MILLER DAB, 1981, IEEE J QUANTUM ELECT, V17, P306

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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