Characterization of Semiconductor-Materials by Wtem and Sims
Ganiere, J. D.; Buffat, P. A.; Ky, N. H.; Blanchard, B.; Spycher, R.
1993

Abstract

The observation of a wedge-shaped semiconductor specimen by transmission electron microscopy (WTEM) is an interesting alternative to conventional TEM. Information on chemical composition, layer thickness down to atomic resolution, spatial extension of the interfaces can be obtained. Secondary ion mass spectrometry (SIMS) is a complementary technique used to gain information on impurity concentration present in the semiconductor material.

Details

Title Characterization of Semiconductor-Materials by Wtem and Sims
Author(s) Ganiere, J. D. ; Buffat, P. A. ; Ky, N. H. ; Blanchard, B. ; Spycher, R.
Published in Analusis
Volume 21
Issue 8
Pages M12-M14
Date 1993
ISSN 0365-4877
Keywords
Note Ecole polytech fed lausanne,i2m,ch-1015 lausanne,switzerland. leti,ceng,f-38041 grenoble,france. Ganiere, jd, ecole polytech fed lausanne,imo,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: MG001
Cited Reference Count: 5
Cited References:
BUFFAT PA, 1990, EVALUATION ADV SEMIC, P319
HONG KN, 1993, J APPL PHYS, V73, P3769
KAKIBAYASHI H, 1986, JPN J APPL PHYS 1, V25, P1644
SPYCHER R, 1990, MATER RES SOC S P, V198, P135
STADELMANN PA, 1987, ULTRAMICROSCOPY, V21, P131
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Laboratories LOEQ
Record Appears in Scientific production and competences > SB - School of Basic Sciences > SB Archives > LOEQ - Laboratory of Quantum Optoelectronics
Peer-reviewed publications
Work produced at EPFL
Journal Articles
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Record creation date 2007-08-31