Characterization of Semiconductor-Materials by Wtem and Sims

The observation of a wedge-shaped semiconductor specimen by transmission electron microscopy (WTEM) is an interesting alternative to conventional TEM. Information on chemical composition, layer thickness down to atomic resolution, spatial extension of the interfaces can be obtained. Secondary ion mass spectrometry (SIMS) is a complementary technique used to gain information on impurity concentration present in the semiconductor material.


Published in:
Analusis, 21, 8, M12-M14
Year:
1993
ISSN:
0365-4877
Keywords:
Note:
Ecole polytech fed lausanne,i2m,ch-1015 lausanne,switzerland. leti,ceng,f-38041 grenoble,france. Ganiere, jd, ecole polytech fed lausanne,imo,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: MG001
Times Cited: 0
Cited Reference Count: 5
Cited References:
BUFFAT PA, 1990, EVALUATION ADV SEMIC, P319
HONG KN, 1993, J APPL PHYS, V73, P3769
KAKIBAYASHI H, 1986, JPN J APPL PHYS 1, V25, P1644
SPYCHER R, 1990, MATER RES SOC S P, V198, P135
STADELMANN PA, 1987, ULTRAMICROSCOPY, V21, P131
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 Record created 2007-08-31, last modified 2018-03-17


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