Infoscience

Journal article

Characterization of Semiconductor-Materials by Wtem and Sims

The observation of a wedge-shaped semiconductor specimen by transmission electron microscopy (WTEM) is an interesting alternative to conventional TEM. Information on chemical composition, layer thickness down to atomic resolution, spatial extension of the interfaces can be obtained. Secondary ion mass spectrometry (SIMS) is a complementary technique used to gain information on impurity concentration present in the semiconductor material.

    Keywords: SIMULATION ; IMAGE

    Note:

    Ecole polytech fed lausanne,i2m,ch-1015 lausanne,switzerland. leti,ceng,f-38041 grenoble,france. Ganiere, jd, ecole polytech fed lausanne,imo,ch-1015 lausanne,switzerland.

    ISI Document Delivery No.: MG001

    Times Cited: 0

    Cited Reference Count: 5

    Cited References:

    BUFFAT PA, 1990, EVALUATION ADV SEMIC, P319

    HONG KN, 1993, J APPL PHYS, V73, P3769

    KAKIBAYASHI H, 1986, JPN J APPL PHYS 1, V25, P1644

    SPYCHER R, 1990, MATER RES SOC S P, V198, P135

    STADELMANN PA, 1987, ULTRAMICROSCOPY, V21, P131

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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