We report on the growth of barrier, reservoir and quantum well electron transfer (BRAQWET) structures using chemical beam epitaxy. The photoluminescence spectra of the structures are affected by the bias voltage. The QW emission line is extinguished at positive bias and the barrier emission line is extinguished at negative bias. These effects might be used for the BRAQWETs characterization.
Title
Chemical Beam Epitaxy and Photoluminescence Characteristics of Ingaasp/Inp Braqwet Modulators
Published in
Materials Science and Engineering B-Solid State Materials for Advanced Technology
Volume
21
Issue
2-3
Pages
293-295
Conference
Symposium A on Semiconductor Materials for Optoelectronic Devices, OEICs and Photonics, at the 1993 E-MRS Spring Conference, STRASBOURG, FRANCE, May 04-07, 1993
Date
1993
ISSN
0921-5107
Note
Carlin, jf, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: MG486
Cited References:
AGRAWAL N, 1992, APPL PHYS LETT, V61, P249
BENCHIMOL JL, 1991, J CRYST GROWTH, V107, P978
CARLIN JF, 1993, IN PRESS J CRYST GRO
CHIU TH, 1992, J CRYST GROWTH, V124, P165
GLICK M, 1993, P EUROP C INTEGRATED, P14
NICOLARDOT M, 9113146, FR
RUDRA A, 1992, J CRYST GROWTH, V120, P338
SUGIURA H, 1992, J CRYST GROWTH, V121, P579
ZUCKER JE, 1990, IEEE PHOTONIC TECH L, V2, P29
Record creation date
2007-08-31
