Chemical Beam Epitaxy and Photoluminescence Characteristics of Ingaasp/Inp Braqwet Modulators

We report on the growth of barrier, reservoir and quantum well electron transfer (BRAQWET) structures using chemical beam epitaxy. The photoluminescence spectra of the structures are affected by the bias voltage. The QW emission line is extinguished at positive bias and the barrier emission line is extinguished at negative bias. These effects might be used for the BRAQWETs characterization.


Published in:
Materials Science and Engineering B-Solid State Materials for Advanced Technology, 21, 2-3, 293-295
Year:
1993
ISSN:
0921-5107
Keywords:
Note:
Carlin, jf, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: MG486
Times Cited: 2
Cited Reference Count: 9
Cited References:
AGRAWAL N, 1992, APPL PHYS LETT, V61, P249
BENCHIMOL JL, 1991, J CRYST GROWTH, V107, P978
CARLIN JF, 1993, IN PRESS J CRYST GRO
CHIU TH, 1992, J CRYST GROWTH, V124, P165
GLICK M, 1993, P EUROP C INTEGRATED, P14
NICOLARDOT M, 9113146, FR
RUDRA A, 1992, J CRYST GROWTH, V120, P338
SUGIURA H, 1992, J CRYST GROWTH, V121, P579
ZUCKER JE, 1990, IEEE PHOTONIC TECH L, V2, P29
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 Record created 2007-08-31, last modified 2018-12-03


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