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Journal article

Chemical Beam Epitaxy and Photoluminescence Characteristics of Ingaasp/Inp Braqwet Modulators

We report on the growth of barrier, reservoir and quantum well electron transfer (BRAQWET) structures using chemical beam epitaxy. The photoluminescence spectra of the structures are affected by the bias voltage. The QW emission line is extinguished at positive bias and the barrier emission line is extinguished at negative bias. These effects might be used for the BRAQWETs characterization.

    Keywords: QUANTUM-WELL STRUCTURES ; GROWTH ; CBE

    Note:

    Carlin, jf, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.

    ISI Document Delivery No.: MG486

    Times Cited: 2

    Cited Reference Count: 9

    Cited References:

    AGRAWAL N, 1992, APPL PHYS LETT, V61, P249

    BENCHIMOL JL, 1991, J CRYST GROWTH, V107, P978

    CARLIN JF, 1993, IN PRESS J CRYST GRO

    CHIU TH, 1992, J CRYST GROWTH, V124, P165

    GLICK M, 1993, P EUROP C INTEGRATED, P14

    NICOLARDOT M, 9113146, FR

    RUDRA A, 1992, J CRYST GROWTH, V120, P338

    SUGIURA H, 1992, J CRYST GROWTH, V121, P579

    ZUCKER JE, 1990, IEEE PHOTONIC TECH L, V2, P29

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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