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Journal article

Optical Amplification and Its Saturation in Semiconductor Quantum-Wells

We present an investigation of the optical gain and its saturation of the electron-hole plasma confined in GaAs/(Ga,Al)As quantum wells. For such investigations the variable stripe length method is a simple but quite powerful tool. The spacial longitudinal variation of luminous and electron-hole pair densities in narrow stripes of various lengths has been investigated theoretically and experimentally. For this also the spectra of spontaneous luminescence (emitted in a direction perpendicular to the stripe) have been recorded at different places on the stripe. The experimental results are compared with the predictions of a theoretical model of the optical quantum well amplifier. We find that saturation is caused by carrier depopulation through stimulated electron-hole recombination, and by the loss of light travelling in the direction of the stripe due to scattering and/or reabsorption. However, we do not find evidence of intra band saturation, ie. of a non thermal electron or hole distribution.

    Keywords: ELECTRON-HOLE PLASMA ; GAIN MEASUREMENTS ; LASERS ; SPECTRA ; RENORMALIZATION ; ABSORPTION ; TIME

    Note:

    Univ cagliari,dipartimento sci fisiche,i-09124 cagliari,italy. Butty, j, ecole polytech fed lausanne,ph ecublens,inst phys appl,ch-1015 lausanne,switzerland.

    ISI Document Delivery No.: ML215

    Times Cited: 3

    Cited Reference Count: 27

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    Reference

    • LOEQ-ARTICLE-1993-002

    Record created on 2007-08-31, modified on 2016-08-08

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