Infoscience

Journal article

Movpe Growth and Properties of Gap Using Nitrogen Bridged Adduct

Amongst the new precursors for the III component in MOVPE there are numerous nitrogen containing compounds. Using those compounds, besides the electrical and optical quality of the grown material, the question of incorporation of nitrogen arises. We present the results of GaP growth with the TMGa-TMN adduct. Photoluminscence at 2 K clearly detects nitrogen as a substitutional dopant. Considering the luminescence features the nitrogen concentration was estimated to be about 10(16)-10(17) cm-3. The residual carrier concentration of the layers is in the range of 10(15) cm-3. No oxygen-related emission was observed. A discussion of the growth and the properties of the material is given.

    Keywords: GALLIUM-PHOSPHIDE ; LAYERS ; GAAS

    Note:

    Ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. Keller, bp, karl marx univ,sekt chem & phys,linnestr 3-5,o-7010 leipzig,germany.

    ISI Document Delivery No.: HK152

    Times Cited: 2

    Cited Reference Count: 23

    Cited References:

    1987, LANDOLTBORNSTEIN NUM

    BASS SJ, 1986, J CRYST GROWTH, V75, P221

    BENEKING H, 1981, J CRYST GROWTH, V55, P79

    BIEFELD RM, 1982, J CRYST GROWTH, V56, P382

    BINDEMANN R, 1973, PHYS STATUS SOLIDI B, V56, P563

    BINDEMANN R, 1974, PHYS STATUS SOLIDI B, V66, P133

    CARTER AG, 1939, J CHEM SOC 1, P495

    COHEN E, 1977, PHYS REV B, V15, P1039

    DEAN PJ, 1967, J APPL PHYS, V38, P3351

    HANSEL T, 1979, CRYST RES TECHNOL, V14, P977

    KELLER BP, 1991, CRYST RES TECHNOL, V26, P253

    KOPYLOV AA, 1977, FIZ TEKH POLUPROV, V11, P867

    KUECH TF, 1984, J CRYST GROWTH, V68, P148

    LEYS MR, 1989, J ELECT MAT, V18, P25

    RIEDE V, 1986, PHYS STATUS SOLIDI A, V93, K151

    ROBERTS JS, 1990, J CRYST GROWTH, V104, P857

    SCHWABE R, 1979, PHYS STATUS SOLIDI B, V95, P571

    SCHWETLICK S, 1989, J CRYST GROWTH, V89, P378

    SEIFERT W, 1985, CRYST RES TECHNOL, V20, P625

    SEIFERT W, 1989, CRYST RES TECHNOL, V24, P29

    STRINGFELLOW GB, 1972, J ELECTROCHEM SOC, V119, P1780

    THOMAS DG, 1966, PHYS REV, V150, P680

    WOLFRAM P, 1989, J CRYST GROWTH, V96, P691

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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