Movpe Growth and Properties of Gap Using Nitrogen Bridged Adduct

Amongst the new precursors for the III component in MOVPE there are numerous nitrogen containing compounds. Using those compounds, besides the electrical and optical quality of the grown material, the question of incorporation of nitrogen arises. We present the results of GaP growth with the TMGa-TMN adduct. Photoluminscence at 2 K clearly detects nitrogen as a substitutional dopant. Considering the luminescence features the nitrogen concentration was estimated to be about 10(16)-10(17) cm-3. The residual carrier concentration of the layers is in the range of 10(15) cm-3. No oxygen-related emission was observed. A discussion of the growth and the properties of the material is given.


Published in:
Journal of Crystal Growth, 118, 1-2, 176-182
Year:
1992
ISSN:
0022-0248
Keywords:
Note:
Ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. Keller, bp, karl marx univ,sekt chem & phys,linnestr 3-5,o-7010 leipzig,germany.
ISI Document Delivery No.: HK152
Times Cited: 2
Cited Reference Count: 23
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