Bulk Gaalas Mirror as a Saturable Absorber for Subpicosecond Pulse Generation around 835 Nm

We report on a bulk GaAlAs mirror which is used as a saturable absorber for subpicosecond pulse generation around 835 nm. The mirror consists of a 200 nm layer of bulk GaAlAs (with approximately 5% Al content) which is grown on a linear Bragg mirror and is used as a laser end mirror. The incorporation of the bulk GaAlAs mirror into a synchronously pumped styryl-9 dye laser leads to a significant mode locking improvement and pulse shortening. Optimum operation of the laser is obtained for wavelengths near the room temperature band edge of the GaAlAs material: at 836 nm close to bandwidth limited pulses with a duration of 220 fs are generated.


Published in:
Optics Communications, 89, 2-4, 245-248
Year:
1992
ISSN:
0030-4018
Keywords:
Note:
Ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland. Bi, jq, univ bern,inst appl phys,sidlerstr 5,ch-3012 bern,switzerland.
ISI Document Delivery No.: HU368
Times Cited: 5
Cited Reference Count: 16
Cited References:
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