Infoscience

Journal article

Indirect-Energy-Gap Dependence on Al Concentration in Alxga1-Xas Alloys

The energy of the indirect X exciton in AlxGa1-xAs epitaxial layers (with 0.38 < x < 0.81) has been determined by photoluminescence measurements at a sample temperature of 12 K; from these data, the dependence on the Al concentration x of the energy of the GAMMA-X gap has been obtained: E(g)X(x) = 1.988 + 0.207x + 0.055x2 eV. This relation is characterized by a very small bowing. From our data we deduce also the coordinates of the GAMMA-X crossover point: x(c) = 0.385 +/- 0.016 and E(c) = 2076 +/- 4 meV at T = 0 K and x(c) = 0.396 +/- 0.016 and E(c) = 1997 +/- 4 meV at T = 300 K.

    Keywords: CONDUCTION-BAND MINIMA ; SEMICONDUCTOR ALLOYS ; GA1-XALXAS ALLOYS ; PHOTOLUMINESCENCE ; EDGE

    Note:

    Ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. univ pavia,dipartimento fis,i-27100 pavia,italy. univ trento,dipartimento fis,i-38050 trent,italy. Guzzi, m, univ milan,dipartimento fis,via celoria 16,i-20133 milan,italy.

    ISI Document Delivery No.: HU799

    Times Cited: 24

    Cited Reference Count: 36

    Cited References:

    ASPNES DE, 1976, PHYS REV B, V14, P5331

    BALDERESCHI A, 1977, J PHYS C SOLID STATE, V10, P4709

    BEVINGTON PR, 1969, DATA REDUCTION ERROR

    BIMBERG D, 1981, SOLID STATE COMMUN, V37, P987

    BOSIO C, 1988, PHYS REV B, V38, P3263

    CASEY HC, 1978, HETEROSTRUCTURE LA A

    DINGLE R, 1977, I PHYS C SER A, V33, P210

    DINGLE R, 1979, SOLID STATE COMMUN, V29, P171

    GRILLI E, 1992, PHYS REV B, V45, P1638

    GUZZI M, 1980, SOLID STATE PHENOMEN, V10, P25

    HENNING JCM, 1986, J PHYS C SOLID STATE, V19, L335

    HILL R, 1974, J PHYS C, V7, P521

    HOPFIELD JJ, 1961, PHYS REV, V122, P35

    HUMPHREYS RG, 1978, PHYS REV B, V18, P5590

    KOPYLOV AA, 1977, SOV PHYS SEMICOND, V11, P510

    KUECH TF, 1987, APPL PHYS LETT, V51, P505

    LEE HJ, 1980, PHYS REV B, V21, P659

    LIPARI NO, COMMUNICATION

    LOGOTHETIDIS S, 1991, PHYS REV B, V43, P11950

    LORENZ MR, 1970, SOLID STATE COMMUN, V8, P693

    MADELUNG O, 1987, LANDOLTBORNSTEIN, V22

    MIURA N, 1991, SOLID STATE COMMUN, V79, P1039

    MONEMAR B, 1973, PHYS REV B, V8, P5711

    MONEMAR B, 1976, J APPL PHYS, V47, P2604

    NELSON JS, 1991, PHYS REV B, V43, P4908

    OELGART G, UNPUB

    OELGART G, 1987, SEMICOND SCI TECH, V2, P468

    SAXENA AK, 1981, PHYS STATUS SOLIDI B, V105, P777

    VANVECHTEN JA, 1970, PHYS REV B, V1, P3351

    VANVECHTEN JA, 1970, PHYS REV B, V2, P2160

    VARSHNI YP, 1967, PHYSICA, V34, P149

    VINA L, 1984, PHYS REV B, V30, P1978

    WEI SH, 1989, PHYS REV B, V39, P3279

    WOLFORD DJ, 1979, J LUMIN, V18, P863

    WOLFORD DJ, 1979, THESIS U ILLINOIS UR

    WOLFORD DJ, 1985, SOLID STATE COMMUN, V53, P1069

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

Fulltext

Related material