Growth of Gainas(P) and Gainasp/Gainas Mqw Structures by Cbe
Rudra, A.; Carlin, J. F.; Ruterana, P.; Gailhanou, M.; Staehli, J. L.; Ilegems, M.
1992

Abstract

We discuss the growth of lattice matched GaInAs, GaInAsP and GaInAsP/GaInAs multiple quantum well structures for high speed laser applications. Optical cavities, including five 90 angstrom GaInAs quantum wells with GaInAsP barriers and waveguides showed a 4 K photoluminescence line width of 8.7 meV. Transmission electron microscopy and X-ray diffraction confirm the good control over the growth of these structures.

Details

Title Growth of Gainas(P) and Gainasp/Gainas Mqw Structures by Cbe
Author(s) Rudra, A. ; Carlin, J. F. ; Ruterana, P. ; Gailhanou, M. ; Staehli, J. L. ; Ilegems, M.
Published in Journal of Crystal Growth
Volume 120
Issue 1-4
Pages 338-342
Date 1992
ISSN 0022-0248
Note Ecole polytech fed lausanne,inst appl phys,dept phys,ch-1015 lausanne,switzerland. Rudra, a, ecole polytech fed lausanne,inst micro & optoelectr,dept phys,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: HW835
Cited Reference Count: 16
Cited References:
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DOI https://doi.org/10.1016/0022-0248(92)90414-E
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Laboratories LOEQ
LASPE
CIME
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LOEQ - Laboratory of Quantum Optoelectronics
Scientific production and competences > SB - School of Basic Sciences > CIME - Interdisciplinary Center for Electron Microscopy
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date 2007-08-31