Thermally Stable Operation of a Bistable Fabry-Perot Etalon with a Bulk Gaas Spacer

We report thermally stable latched operation of a nonlinear Fabry-Perot device without heat sinking other than through the 0.5-mm GaAs substrate. The device has a 2-μm GaAs spacer and integrated dielectric mirrors with reflectivities of 91% and 99%. Operated in reflection at a wavelength of 886 nm, thresholds as low as 1 mW, and contrast ratios of 10:1 have been observed. Measurements of the threshold dependence on the size of the excited spot give evidence for carrier diffusion and light-diffraction effects.


Published in:
Applied Physics Letters, 60, 25, 3099-3101
Year:
1992
ISSN:
0003-6951
Keywords:
Note:
Fed inst technol,inst micro & optoelectr,ch-1015 lausanne,switzerland. Acklin, b, univ neuchatel,inst microtechnol,ch-2000 neuchatel,switzerland.
ISI Document Delivery No.: HZ537
Times Cited: 12
Cited Reference Count: 10
Cited References:
ACKLIN B, 1991, OSA P PHOTONIC SWITC, V8, P231
GARMIRE E, 1989, IEEE J QUANTUM ELECT, V25, P289
GIBBS HM, 1979, APPL PHYS LETT, V35, P451
KUSZELEWICZ R, 1988, APPL PHYS LETT, V53, P2138
LEE YH, 1986, PHYS REV LETT, V57, P2446
MASSEBOEUF E, 1989, APPL PHYS LETT, V54, P2290
MILLER A, 1989, J OPT SOC AM B, V6, P567
SFEZ BG, 1990, APPL PHYS LETT, V57, P324
SFEZ BG, 1991, OPT LETT, V16, P855
WHERRETT BS, 1984, IEEE J QUANTUM ELECT, V20, P646
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