Infoscience

Journal article

Differential Photoluminescence Excitation Spectroscopy - a Novel and Sensitive Tool to Probe Gain and Absorption in Semiconductor Nanostructures

Differential photoluminescence excitation (DPLE) spectroscopy is shown to be an efficient way to measure gain and absorption spectra of excited semiconductors. Very small excited volumes can be probed, and thus DPLE spectroscopy is ideal to probe nanostructures. This technique is applied to investigate the width of the gap between the second electron and hole subbands of a quantum Well versus carrier density, in a sample which contains only a few wellS. It is found that the reduction of this gap is a smooth function of the electron hole pair- density, and no drastic change occurs when the second subbands start to be populated.

    Keywords: BAND-GAP RENORMALIZATION ; QUANTUM-WELL STRUCTURES ; ELECTRON-HOLE ; PLASMA ; OPTICAL-PROPERTIES ; GAAS

    Note:

    Ecole polytech fed lausanne,inst phys appl,ph ecublens,ch-1015 lausanne,switzerland. Bongiovanni, g, univ cagliari,dipartimento sci fis,via osped 72,i-09124 cagliari,italy.

    ISI Document Delivery No.: JR284

    Times Cited: 2

    Cited Reference Count: 15

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    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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