Infoscience

Journal article

Electron-Hole Plasma Decay Time in Gaas/(Ga, Al)as Quantum-Wells

A steady state photoluminescence experiment is reported investigating the lifetime of an electron-hole plasma confined in a quintum well. The results are compared with theoretical evaluations of the pure radiative decay rate and good agreement is found. The effects caused by the filling of electron and hole subbands are also discussed.

    Keywords: DIRECT-GAP SEMICONDUCTORS ; OPTICAL-PROPERTIES ; RESOLVED RAMAN ; EXPANSION ; SI

    Note:

    Ecole polytech fed lausanne,inst phys appl,ph ecublens,ch-1015 lausanne,switzerland. Bongiovanni, g, univ cagliari,dipartimento sci fis,via osped 72,i-09124 cagliari,italy.

    ISI Document Delivery No.: JR284

    Times Cited: 5

    Cited Reference Count: 16

    Cited References:

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    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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