We report, for the first time, a direct relationship between the composition fluctuation on the ternary layer grown by atmospheric pressure metalorganic vapor-phase epitaxy (AP-MOVPE) and the pulsed character of high-vapor-pressure metalorganic (MO) flows. We show that the grwoth rates of GaAlAs and GaInAs layers, grown with trimethylgallium (TMG) and triethylgallium (TEG) sources, are of tens of angstrom per bubble for the methyl case and a few angstrom for the ethyl one.
Title
Effect of Metal-Organic Composition Fluctuation on the Atmospheric-Pressure Metal-Organic Vapor-Phase Epitaxy Growth of GaAlAs/GaAs and GaInAs/InP Structures
Published in
Japanese Journal of Applied Physics Part 2 : Letters
Volume
30
Issue
5A
Pages
L783-L785
Date
1991
ISSN
0021-4922
Note
Ecole polytech fed lausanne,dept phys,ch-1015 lausanne,switzerland. cpqd telebras,br-13083 campinas,sp,brazil. univ campinas,inst fis,br-13081 campinas,sp,brazil. Ossart, p, ctr natl etud telecommun,196 ave henri ravera,f-92220 bagneux,france. ISI Document Delivery No.: FL138 Times Cited: 1 Cited Reference Count: 15 Cited References: IN PRESS J CRYST GRO 1988, J CRYST GROWTH, V93 BOEGLIN H, 1990, MICROELECTRONIC MANU, V13, P23 FAIST J, 1989, J APPL PHYS, V66, P1023 HERSEE SD, 1990, J VAC SCI TECHNOL A, V8, P800 MIRCEA A, 1986, J CRYST GROWTH, V77, P340 SACILOTTI M, IN PRESS J APPL PHYS SACILOTTI M, 1989, REV BRAS FIS, V4, P1 SCHAUS CF, 1986, J APPL PHYS, V59, P678 SILLMON RS, 1986, J CRYST GROWTH, V77, P73 SKROMME BJ, 1988, APPL PHYS LETT, V52, P990 SMEETS ETJ, 1986, J CRYST GROWTH, V77, P347 THRUSH EJ, 1984, J CRYST GROWTH, V68, P412 TSUI R, 1986, APPL PHYS LETT, V40, P940 TU CW, 1987, J CRYST GROWTH, V81, P159
Record creation date
2007-08-31
