A Model for the Zn Diffusion in Gaas by a Photoluminescence Study

To study the mechanism of zinc diffusion in GaAs, we diffused zinc from a ZnAs2 source into Si-doped GaAs samples (n almost-equal-to 1.3 X 10(18) cm-3) at different temperatures (from 575-degrees-C up to 700-degrees-C) in sealed evacuated quartz tubes. The samples are characterized by the depth profile of the photoluminescence at different temperatures. The photoluminescence spectra show characteristic emission associated to deep levels of gallium and arsenic vacancies. A detailed analysis of the spectra demonstrates the role played by vacancies in the Zn diffusion process. The spatial correlation between the luminescence spectra and the Zn concentration obtained from secondary ion mass spectroscopy measurements has been demonstrated.


Published in:
Journal of Applied Physics, 69, 11, 7585-7593
Year:
1991
ISSN:
0021-8979
Keywords:
Note:
Ky, nh, swiss fed inst technol,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: FP401
Times Cited: 36
Cited Reference Count: 41
Cited References:
AGENO SK, 1985, APPL PHYS LETT, V47, P1193
ANDO H, 1981, JPN J APPL PHYS, V20, L197
ARAUJO D, IN PRESS
BARAFF GA, 1985, PHYS REV LETT, V55, P1327
BLANC J, 1974, J APPL PHYS, V45, P1948
BORGHS G, 1989, J APPL PHYS, V66, P4381
BRIDGES F, 1990, J PHYS C SOLID STATE, V2, P2975
CAPASSO F, 1987, SCIENCE, V235, P172
CHIANG SY, 1975, J APPL PHYS, V46, P2986
CHIANG SY, 1975, J LUMIN, V10, P313
COHEN RM, 1990, J APPL PHYS, V67, P7268
DEAN PJ, 1982, PROG CRYST GROWTH CH, V5, P89
DEPPE DG, 1988, J APPL PHYS, V64, R93
GOSELE U, 1981, J APPL PHYS, V52, P4617
HARRISON I, 1989, SEMICOND SCI TECH, V4, P841
HAUFE A, 1988, J PHYS C SOLID STATE, V21, P2951
HWANG CJ, 1969, J APPL PHYS, V40, P4584
HWANG CJ, 1969, J APPL PHYS, V40, P4591
HWANG CJ, 1969, PHYS REV, V180, P827
KADHIM MAH, 1972, J MATER SCI, V7, P68
KAHEN KB, 1989, APPL PHYS LETT, V55, P651
LAIDIG WD, 1981, APPL PHYS LETT, V38, P776
LEE CP, 1978, SOLID STATE ELECTRON, V21, P905
LONGINI RL, 1962, SOLID STATE ELECTRON, V5, P127
MAHAN GD, 1967, PHYS REV, V153, P882
MATSUMOTO Y, 1983, JPN J APPL PHYS PT 1, V22, P829
OLEGO D, 1980, PHYS REV B, V22, P886
PANKOVE JI, 1975, OPTICAL PROCESSES SE, CH6
PAVESI L, 1991, IN PRESS OPTICAL QUA
QUINTANA V, 1988, J APPL PHYS, V63, P2454
SERNELIUS BE, 1986, PHYS REV B, V33, P8582
SERNELIUS BE, 1986, PHYS REV B, V34, P5610
SHIH KK, 1976, J ELECTROCHEM SOC, V123, P1737
STOLWIJK NA, 1988, DEFECT DIFFUS FORUM, V59, P79
SWAMINATHAN V, 1988, J APPL PHYS, V63, P2164
TUCK B, 1978, J PHYS D, V11, P2541
TUCK B, 1988, ATOMIC DIFFUSION 3 5
VANOMMEN AH, 1983, J APPL PHYS, V54, P5055
WILLIAMS EW, 1972, SEMICONDUCTORS SEMIM, V8
XU HQ, 1990, PHYS REV B, V41, P5979
YAMAMOTO Y, 1980, JPN J APPL PHYS, V19, P121
Laboratories:




 Record created 2007-08-31, last modified 2018-03-17


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)