Characterization of Ingaas and Inalas Layers on Inp by 4-Crystal High-Resolution X-Ray-Diffraction and Wedge Transmission Electron-Microscopy

The indium desorption rates from InGaAs and InAlAs grown on InP substrates have been measured by wedge transmission electron microscopy as a function of the growth temperature. Desorption becomes significant at 545-degrees-C for both materials. No automatching effects could be observed under the growth conditions of the experiment. The bandgap of In(y)Al1-yAs has been measured at 77 K as a function of the indium content. The composition and the strain have been measured by four-crystal high resolution X-ray diffraction with symmetrical (004) and assymmetrical (115 +/-) Bragg reflections. The intrinsic bandgap follows the relation E(g)(y) = 2.774 - 2.411 y and the strained material the relation E(gs)(y) = 0.671 + 5.236y-6.929y2.


Published in:
Journal of Crystal Growth, 111, 1-4, 456-460
Year:
1991
ISSN:
0022-0248
Keywords:
Note:
Houdre, r, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: FT190
Times Cited: 15
Cited Reference Count: 11
Cited References:
ALLOVON M, 1988, J ELECTRON MATER, V18, P505
BUFFAT PA, 1989, NATO ASI B, V203, P319
DAVIES GJ, 1984, J VAC SCI TECHNOL B, V2, P219
FOXON CT, 1978, J CRYST GROWTH, V44, P75
GUEISSAZ F, 1991, J CRYST GROWTH, V111, P470
MACRANDER AT, 1986, J APPL PHYS, V59, P442
MARZIN JY, 1986, HETEROJUNCTIONS SEMI, P161
OERTEL D, 1989, APPL PHYS LETT, V55, P140
SCOTT EG, 1986, J VAC SCI TECHNOL B, V4, P534
TAPFER L, 1986, PHYS REV B, V33, P5565
TAUPIN D, 1964, B SOC FRANC MINER CR, V87, P469
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