Design and Investigation of a Nonlinear Fabry-Perot Device with Gaas Spacer Layer
A bistable etalon, consisting of an optically nonlinear semiconductor spacer layer sandwiched between two Bragg mirrors, has been optimized for use in reflection, using a numerical model for a self-consistent carrier density based on published experimental data for the nonlinear absorption alpha(I,lambda) and refraction DELTA-n(I,lambda). The saturation behavior of the refractive index and the absorption in bulk GaAs has been investigated at different wavelengths. High saturation values of DELTA-n(s) almost-equal-to .080 were found 20 meV below the gap. 30 meV above the gap we observed a comparable index change, together with an absorption saturation feature, leading to a highly nonlinear response close to the bistability threshold in our unoptimized etalon.
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Ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland. Acklin, b, univ neuchatel,inst microtech,rue a l breguet 2,ch-2000 neuchatel,switzerland.
ISI Document Delivery No.: FU058
Times Cited: 1
Cited Reference Count: 6
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Record created on 2007-08-31, modified on 2016-08-08