Characterization of InGaAs and InAlAs layers on InP by four-crystal high resolution X-ray diffraction and wedge transmission electron microscopy


Published in:
Journal of Crystal Growth, 111, 1-4, 456-460
Presented at:
6th International Conference on Molecular Beam Epitaxy
Year:
1991
Laboratories:




 Record created 2007-08-31, last modified 2018-03-18


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)