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Journal article

Sem Observations of Zinc Diffusion Induced Disordering in Gaas/Algaas Multiquantum Well Structures

Characterization of impurety diffusion induced disordering in GaAs/AlGaAs multiquantum well structures, grown by molecular beam epitaxy, has been carried out by scanning electron microscopy.

    Keywords: QUANTUM

    Note:

    Ecole polytech fed lausanne,inst interdept microscopie electr,ch-1015 lausanne,switzerland. Ganiere, jd, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.

    ISI Document Delivery No.: FU051

    Times Cited: 0

    Cited Reference Count: 5

    Cited References:

    LAIDIG WD, 1982, J ELECTRON MATER, V11, P1

    LAIDIG WD, 1983, J APPL PHYS, V54, P6382

    LEE JW, 1984, J ELECTRON MATER, V13, P147

    RAO PV, 1985, J INVERTEBR PATHOL, V46, P1

    TAN TY, 1987, J APPL PHYS, V61, P1841

    Reference

    • LOEQ-ARTICLE-1988-001

    Record created on 2007-08-31, modified on 2016-08-08

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