Sem Observations of Zinc Diffusion Induced Disordering in Gaas/Algaas Multiquantum Well Structures
Characterization of impurety diffusion induced disordering in GaAs/AlGaAs multiquantum well structures, grown by molecular beam epitaxy, has been carried out by scanning electron microscopy.
Ecole polytech fed lausanne,inst interdept microscopie electr,ch-1015 lausanne,switzerland. Ganiere, jd, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: FU051
Times Cited: 0
Cited Reference Count: 5
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Record created on 2007-08-31, modified on 2016-08-08