Dislocation reduction via annealing of GaAs grown on Si substrates
1987
Details
Title
Dislocation reduction via annealing of GaAs grown on Si substrates
Author(s)
Houdré, R. ; Munns, G. ; Morkoç, H. ; Choi, C. ; Otsuka, N. ; Zhang, S. L. ; Levi, D. ; Klein, M. V.
Published in
SPIE Conference on Growth of Compound Semiconductors
Series
SPIE Proceedings, 796
Pages
27-31
Conference
Advances in Semiconductors and Semiconductor Structures, Bay Point, FL, United States
Date
1987
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LOEQ - Laboratory of Quantum Optoelectronics
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > SCI-SB-RH - Groupe SCI SB RH
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > SCI-SB-RH - Groupe SCI SB RH
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2007-08-31