Local volume inversion and corner effects in triangular gate-all-around MOSFETs
2006
Details
Title
Local volume inversion and corner effects in triangular gate-all-around MOSFETs
Author(s)
Moselund, K. E. ; Bouvet, D. ; Tschuor, L. ; Pott, V. ; Dainesi, P. ; Ionescu, A. M.
Published in
2006 European Solid-State Device Research Conference
Pages
359-362
Conference
ESSDERC 2006
Date
2006
Other identifier(s)
View record in Web of Science
Laboratories
NANOLAB
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2007-05-16