Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor

This paper reports on the fabrication and electrical characterization of a novel pressure sensor based on a suspended-gate MOSFET (SG-MOSFET) using a new polyimide process. The device is composed of a SG-MOSFET built on a thin SOI membrane released by a backside silicon wafer etching. The membrane deflection induced by the backside-applied pressure (up to 250 kPa) is detected by the variation of the MOSFET drain current. Device behavior simulations and optimized fabrication process flow are presented as well as the first electrical characterization of the SG-MOSFET.


Published in:
Microelectronic Engineering, 83, 1185-1188
Year:
2006
Publisher:
Elsevier
ISSN:
0167-9317
Other identifiers:
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2007-05-16, last modified 2018-03-17

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