Double gate tunnel FET with ultrathin silicon body and high-k dielectric
2006
Details
Title
Double gate tunnel FET with ultrathin silicon body and high-k dielectric
Author(s)
Boucart, K. ; Ionescu, A. M.
Published in
Proceedings of the 36th European Solid-State Devices Research Conference
Pages
383-386
Conference
ESSDERC 2006
Date
2006
Laboratories
NANOLAB
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Record creation date
2007-05-16